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Recrystallization of ion-implanted α-SiC

  • H. G. Bohn (a1), J. M. Williams (a2), C. J. McHargue (a2) and G. M. Begun (a2)

Abstract

The annealing behavior of ion-implanted α-SiC single crystal was determined for samples implanted with 62 keV 14N to doses of 5.5X1014/cm2 and 8.0X1016/cm2 and with 260 keV 52Cr to doses of 1.5X1014/cm2 and 1.0X1016/cm2. The high-dose samples formed amorphous surface layers to depths of 0.17 μm (N) and 0.28 μm (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600°C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He+, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew cpitaxially from the underlying undamaged material up to 1500°C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000°C.

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Recrystallization of ion-implanted α-SiC

  • H. G. Bohn (a1), J. M. Williams (a2), C. J. McHargue (a2) and G. M. Begun (a2)

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