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Pulsed laser deposition and characterization of conductive RuO2 thin films

Published online by Cambridge University Press:  31 January 2011

A. Iembo ,
F. Fuso ,
E. Arimondo ,
C. Ciofi ,
G. Pennelli ,
G. M. Curró ,
F. Neri  and
M. Allegrini
A. Iembo
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Pisa, Piazza Torricelli 2, I-56126 Pisa, Italy
F. Fuso
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Pisa, Piazza Torricelli 2, I-56126 Pisa, Italy
E. Arimondo
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Pisa, Piazza Torricelli 2, I-56126 Pisa, Italy
C. Ciofi
Affiliation:
Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Università di Pisa, Via Diotisalvi 2, I-56126 Pisa, Italy
G. Pennelli
Affiliation:
Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Università di Pisa, Via Diotisalvi 2, I-56126 Pisa, Italy
G. M. Curró
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Salita Sperone 31, I-98166 Messina, Italy, and Istituto Nazionale per la Fisica della Materia, Unità di Messina, Messina, Italy
F. Neri
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Salita Sperone 31, I-98166 Messina, Italy, and Istituto Nazionale per la Fisica della Materia, Unità di Messina, Messina, Italy
M. Allegrini
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Salita Sperone 31, I-98166 Messina, Italy, and Istituto Nazionale per la Fisica della Materia, Unità di Messina, Messina, Italy
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Abstract

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 6 , June 1997 , pp. 1433 - 1436
Copyright
Copyright © Materials Research Society 1997

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References

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