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Pt/Ti/SiO2/Si substrates

Published online by Cambridge University Press:  03 March 2011

G.R. Fox*
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
S. Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
S.B. Krupanidhi
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
L.M. Casas
Affiliation:
Army Research Laboratory, Electronic and Power Sources Directorate, AMSRL-EP-EC-M. Fort Monmouth, New Jersey 07703-5601
*
a)Present address: Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, CH-1015.
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Abstract

Pt/Ti/SiO2/Si structures have been studied to investigate the structural, chemical, and microstructural changes that occur during annealing. Grain growth of the as-deposited Pt columns was observed after annealing at 650 °C, and extensive changes in the Pt microstructure were apparent following a 750 °C anneal for 20 min. In addition, two types of defects were identified on the surfaces of annealed substrates. Defect formation was retarded when the surface was covered with a ferroelectric film. Concurrent with the annealing-induced Pt microstructure changes, Ti from the adhesion layer between the Pt and the SiO2 migrated into the Pt layer and oxidized. It was shown with spectroscopic ellipsometry and Auger electron spectroscopy that for long annealing times, the titanium oxide layer can reach the Pt surface. Consequently, at the processing temperatures utilized in preparing many ferroelectric thin films, the substrate is not completely inert or immobile. The changes associated with Ti migration could be especially problematic in techniques that require the substrate to be heated prior to film deposition.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

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References

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