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Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganic precursor

  • Yumi H. Ikuhara (a1), Yuji Iwamoto (a1), Koichi Kikuta (a2) and Shin-ichi Hirano (a2)


Epitaxial LiMn2O4 was successfully synthesized by coating a [Li–Mn–O] metalorganic precursor solution onto MgO (110) substrates at temperatures as low as 350 °C. Cross-sectional transmission electron microscopy observation revealed that the orientation relationship between LiMn2O4 and MgO was (111) LiMn2O4 //(111) MgO, (110) LiMn2O4 //(110) MgO, and [112] LiMn2O4 //[112] MgO, which resulted in the (111) LiMn2O4 planes growing perpendicular to the surface plane of MgO. The interface structure consisted of (111) layers of Mn atoms in the LiMn2O4 crystal aligned with the Mg atoms in the (111) planes of the MgO substrate when viewed along the [112] direction.



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Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganic precursor

  • Yumi H. Ikuhara (a1), Yuji Iwamoto (a1), Koichi Kikuta (a2) and Shin-ichi Hirano (a2)


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