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Preparation of zirconia thin films by metalorganic chemical vapor deposition using ultrasonic nebulization

Published online by Cambridge University Press:  31 January 2011

Dong-Young Kim ,
Choon-Ho Lee  and
Soon Ja Park
Dong-Young Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul 151–742, Korea
Choon-Ho Lee
Affiliation:
Department of Materials Engineering, Keimyung University, Nam-gu, Taegu 705–701, Korea
Soon Ja Park
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul 151–742, Korea
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Abstract

Zirconia (ZrO2) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using ultrasonic nebulization with new source materials, Zr(OBu)4, Zr(OBu)3(acac), Zr(OBu)2(acac)2, and Zr(OBu) (acac)3. This process is a simple and economic method to prepare oxide thin films. Zr(OBu)4 was successfully reacted with acetylacetone at a molar ratio of 1: 3. Polycrystalline thin films were deposited at a substrate temperature range from 300 to 550 °C. The substitution of alkoxy radicals by acetylacetone made the deposition rate higher and insensitive to substrate temperature. The films deposited below 450 °C mostly had a monoclinic structure, and those deposited above 450 °C had a tetragonal structure. The measured optical energy band gap of zirconia film was 5.32 eV.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 10 , October 1996 , pp. 2583 - 2587
Copyright
Copyright © Materials Research Society 1996

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