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Preparation of Lutetium Nitride by Direct Nitridation

Published online by Cambridge University Press:  03 March 2011

Takayuki Suehiro*
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Naoto Hirosaki
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yoshinobu Yamamoto
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Toshiyuki Nishimura
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Mamoru Mitomo
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Junichi Takahashi
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
Hisanori Yamane
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
*
a)Address all correspondence to this author. e-mail: suehiro.takayuki@nims.go.jp
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Abstract

Lutetium nitride (LuN), an end member of a new quaternary system Si3N4–SiO2–Lu2O3–LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu–Si–O–N system.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

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