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Preparation of Epitaxial BaTiO3 Thin Films by the Dipping-pyrolysis Process

  • S. Kim (a1), T. Manabe (a2), I. Yamaguchi (a2), T. Kumagai (a2) and S. Mizuta (a2)...


Epitaxial BaTiO3 thin films were prepared on SrTiO3 (100) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Highly oriented BaTiO3 thin films were crystallized by heat treatment at 800 °C and higher, from amorphous precursor films pyrolyzed at 470 °C. XRD pole-figure and reciprocal-space mapping analyses showed that the films were epitaxially grown on SrTiO3substrates and were pseudocubic phase with an a║/aτ ratio of 1.003, smaller than the c0/a0 ratio (=1.011) of bulk tetragonal BaTiO3.



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1.Wills, L. A., Wessels, B. W., Richeson, D. S., and Marks, T. J., Appl. Phys. Lett. 60, 41 (1992).
2.Nashimoto, K., Fork, D. K., and Geballe, T. H., Appl. Phys. Lett. 60, 1199 (1992).
3.Terauchi, H., Watanabe, Y., Kasatani, H., Kamigaki, K., Yano, Y., Terashima, T., and Bando, Y., J. Phys. Soc. Jpn. 61, 2194 (1992).
4.Gong, J., Kawasaki, M., Fujito, K., Tanaka, U., Ishizawa, N., Yoshimoto, M., Koinuma, H., Kumagai, M., Hirai, K., and Horiguchi, K., Jpn. J. Appl. Phys. 32, L687 (1993).
5.Benomar, W. O., Xue, S. S., Lessard, R. A., Singh, A., Wu, Z. L., and Kuo, P. K., J. Mater. Res. 9, 970 (1994).
6.Shi, E., Cho, C. R., Jang, M. S., Jeong, S. Y., and Kim, H. J., J. Mater. Res. 9, 2914 (1994).
7.Matsuoka, M., Hoshino, K., and Ono, K., J. Appl. Phys. 76, 1768 (1994).
8.Kim, T. W. and Yom, S. S., Appl. Phys. Lett. 65, 1955 (1994).
9.Nose, T., Kim, H-T., and Uwe, H., Jpn. J. Appl. Phys. 33, 5259 (1994).
10.Srikant, V., Tarsa, E. J., Clarke, D. R., and Speck, J. S., J. Appl. Phys. 77, 1517 (1995).
11.Kim, S., Hishita, S., Kang, Y. M., and Baik, S., J. Appl. Phys. 78, 5604 (1996).
12.Kaiser, D. L., Vaudin, M. D., Lotter, L. D., Wang, Z. L., Cline, J. P., Hwang, C. S., Marinenko, R. B., and Gillen, J. G., Appl. Phys. Lett. 66, 2801 (1995).
13.Burhanuddin, Z. A., Tomar, M. S., and Dayalan, E., Thin Solid Films 253, 53 (1994).
14.Peng, C-J. and Krupanidhi, S. B., J. Mater. Res. 10, 708 (1995).
15.Hwang, C. S., Park, S. O., Cho, H-J., Kang, C. S., Kang, H-K., Lee, S. I., and Lee, M. Y., Appl. Phys. Lett. 67, 2819 (1995).
16.Chen, Y-F., Sun, L., Yu, T., Chen, J-X., Zhu, Y-Y., Ming, N-B., Chen, X-Y., and Liu, Z-G., Thin Solid Films 269, 18 (1995).
17.Seifert, A., Lange, F. F., and Speck, J. S., J. Mater. Res. 10, 680 (1995).
18.Masuda, A., Yamanaka, Y., Tazoe, M., Nakamura, T., Morimoto, A., and Shimizu, T., J. Cryst. Growth 158, 84 (1996).
19.Kim, S., Manabe, T., Yamaguchi, I., Kumagai, T., and Mizuta, S., in Proc. 1996 MRS-J Symposium (in press).
20.Touloukian, Y. S., Thermophysical Properties of Matter (IFI/Plenum, New York, 1977), Vol. 13, pp. 554 and 570.

Preparation of Epitaxial BaTiO3 Thin Films by the Dipping-pyrolysis Process

  • S. Kim (a1), T. Manabe (a2), I. Yamaguchi (a2), T. Kumagai (a2) and S. Mizuta (a2)...


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