Skip to main content Accessibility help
×
Home

Preparation of Cu(In,Ga)Se2 thin films from In–Ga–Se precursors for high-efficiency solar cells

  • S. Nishiwaki (a1), T. Satoh (a1), S. Hayashi (a1), Y. Hashimoto (a1), T. Negami (a1) and T. Wada (a1)...

Abstract

Growth of Cu(In,Ga)Se2 (CIGS) films from In–Ga–Se precursors was characterized by scanning Auger electron spectroscopy (SAES), secondary ion mass spectroscopy (SIMS), x-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). In–Ga–Se precursor layers were deposited on Mo-coated soda-lime glass, and then the layers were exposed to Cu and Se fluxes to form CIGS films. The SIMS and SAES analyses showed a homogeneous distribution of Cu throughout the CIGS films during the deposition of Cu and Se. The phase changes observed in the CIGS films during the deposition of Cu and Se on the In–Ga–Se precursor films were as follows: (In,Ga)2Se3 →[Cu(In,Ga)5Se8] →Cu(In,Ga)3Se5 →Cu(In,Ga)Se2. The grain size increased from the submicron grains of the (In,Ga)2Se3 precursor film to several micrometers in the stoichiometric Cu(In,Ga)Se2 film. A growth model of CIGS crystals is introduced on the basis of the results of TEM observations. CIGS crystals are mainly grown under (In,Ga)-rich conditions in the preparation from In–Ga–Se precursor films.

Copyright

References

Hide All
1.Jaffe, J.E. and Zunger, A., Phys. Rev. B 29, 1882 (1984).
2.Schock, H.W., Appl. Surf. Sci. 92, 606 (1994).
3.Rockett, A. and Birkmire, R.M., J. Appl. Phys. 70, R81 (1991).
4.Gabor, A.M., Tuttle, J.R., Albin, D.S., Tennant, A.L., Contreras, M.A., and Noufi, R., AIP Conf. Proc. 306, Proc. 12th NREL Photovoltaic Program Review Meeting (AIP, New York, 1994), p. 59.
5.Wada, T., in Inst. Phys. Conf. Ser. 152: Ternary and Multinary Compounds, Proc. 11th Conf. on Ternary and Multinary Compounds, Salford, 1997 (IOP, 1998), p. 903.
6.Wada, T., Kohara, N., Negami, T., and Nishitani, M., J. Mater. Res. 12, 1456 (1997).
7.Klenk, R., Walter, T., Schock, H.W., and Cahen, D., Adv. Mater. 5, 114 (1993).
8.Tuttle, J.R., Contreras, M.A., Bode, M.H., Niles, D., Albin, D.S., Matson, R., Gabor, A.M., Tennant, A., Duda, A., and Noufi, R., J. Appl. Phys. 77, 153 (1995).
9.Kohara, N., Negami, T., Nishitani, M., and Wada, T., Jpn. J. Appl. Phys. 34, L1141 (1995).
10.Gartsman, K., Chernyak, L., Lyahovitskaya, V., Cahen, D., Didik, V., Kozlovsky, V., Malkovich, R., Skoryatina, E., and Usacheva, V., J. Appl. Phys. 82, 4282 (1997).
11.Cattarin, S., Pagura, C., Armelao, L., Bertoncello, R., and Dietz, N., J. Electrochem. Soc. 142, 2818 (1995).
12.Konagai, M., Ohtake, Y., and Okamoto, T., in Thin Films for Photovoltaic and Related Device Applications, edited by Ginley, D., Catalans, A., Schock, H.W., Eberspacher, C., Peterson, T.M., and Wada, T. (Mater. Res. Soc. Symp. Proc. 426, Pittsburgh, PA, 1996), p. 153.
13.Negami, T., Kohara, N., Nishitani, M., Wada, T., and Hirao, T., Appl. Phys. Lett. 67, 825 (1995).
14.Fearheley, M.L., Sol. Cells 16, 91 (1986).
15.Boehke, U-C. and Kuhn, G., J. Mater. Sci. 22, 1635 (1987).
16.Folmer, J.C.W, Turner, J.A., Noufi, R., and Cahen, D., J. Electrochem. Soc. 132, 1319 (1985).
17.Frangis, N., Tendeloo, G.V., Manolikas, C., Landuyt, J.V., and Amelinckx, S., Phys. Status Solidi 96, 53 (1986).
18.Tseng, B.H. and Wert, C.A., J. Appl. Phys. 65, 2254 (1988).
19.Hanada, T., Yamana, A., Nakamura, Y., Nittono, O., and Wada, T., Jpn. J. Appl. Phys. 36, L1494 (1997).
20.Wada, T., Sol. Energy Mater. Sol. Cells 49, 249 (1997).

Related content

Powered by UNSILO

Preparation of Cu(In,Ga)Se2 thin films from In–Ga–Se precursors for high-efficiency solar cells

  • S. Nishiwaki (a1), T. Satoh (a1), S. Hayashi (a1), Y. Hashimoto (a1), T. Negami (a1) and T. Wada (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.