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Preparation of Cu(In,Ga)Se2 thin films from In–Ga–Se precursors for high-efficiency solar cells

Published online by Cambridge University Press:  31 January 2011

S. Nishiwaki ,
T. Satoh ,
S. Hayashi ,
Y. Hashimoto ,
T. Negami  and
T. Wada
S. Nishiwaki
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Satoh
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
S. Hayashi
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
Y. Hashimoto
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
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Abstract

Growth of Cu(In,Ga)Se2 (CIGS) films from In–Ga–Se precursors was characterized by scanning Auger electron spectroscopy (SAES), secondary ion mass spectroscopy (SIMS), x-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). In–Ga–Se precursor layers were deposited on Mo-coated soda-lime glass, and then the layers were exposed to Cu and Se fluxes to form CIGS films. The SIMS and SAES analyses showed a homogeneous distribution of Cu throughout the CIGS films during the deposition of Cu and Se. The phase changes observed in the CIGS films during the deposition of Cu and Se on the In–Ga–Se precursor films were as follows: (In,Ga)2Se3 →[Cu(In,Ga)5Se8] →Cu(In,Ga)3Se5 →Cu(In,Ga)Se2. The grain size increased from the submicron grains of the (In,Ga)2Se3 precursor film to several micrometers in the stoichiometric Cu(In,Ga)Se2 film. A growth model of CIGS crystals is introduced on the basis of the results of TEM observations. CIGS crystals are mainly grown under (In,Ga)-rich conditions in the preparation from In–Ga–Se precursor films.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4514 - 4520
Copyright
Copyright © Materials Research Society 1999

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