- Cited by 29
Bierwagen, Oliver Ive, Tommy Van de Walle, Chris G. and Speck, James S. 2008. Causes of incorrect carrier-type identification in van der Pauw–Hall measurements. Applied Physics Letters, Vol. 93, Issue. 24, p. 242108.
Li, L Shan, C X Li, B H Yao, B Zhang, J Y Zhao, D X Zhang, Z Z Shen, D Z Fan, X W and Lu, Y M 2008. The compensation source in nitrogen doped ZnO. Journal of Physics D: Applied Physics, Vol. 41, Issue. 24, p. 245402.
Janotti, Anderson and Van de Walle, Chris G 2009. Fundamentals of zinc oxide as a semiconductor. Reports on Progress in Physics, Vol. 72, Issue. 12, p. 126501.
Matsumoto, Kenji Adachi, Yutaka Ohgaki, Takeshi Ohashi, Naoki Haneda, Hajime and Sakaguchi, Isao 2010. Correlation between film thickness and zinc defect distribution along the growth direction in an isotopic multilayer ZnO thin film grown by pulsed laser deposition analyzed using the internal diffusion method. Solid State Communications, Vol. 150, Issue. 43-44, p. 2118.
Yom-Tov, N. Saguy, C. Bolker, A. Kalish, R. and Yaish, Y. E. 2010. Accurate carrier-type determination of nonhomogenously doped diamond. Journal of Applied Physics, Vol. 108, Issue. 4, p. 043711.
Steeves, M. M. and Lad, R. J. 2010. Influence of nanostructure on charge transport in RuO2 thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 28, Issue. 4, p. 906.
Limpijumnong, Sukit Gordon, Luke Miao, Maosheng Janotti, Anderson and Van de Walle, Chris G. 2010. Alternative sources of p-type conduction in acceptor-doped ZnO. Applied Physics Letters, Vol. 97, Issue. 7, p. 072112.
Su, Xueqiong Wang, Li Chen, Jiangbo Wan, Xiaojing Zhang, XinPing and Wang, R P 2011. Role of cobalt in ZnO : Co thin films. Journal of Physics D: Applied Physics, Vol. 44, Issue. 26, p. 265002.
Claflin, B. and Look, D. C. 2011. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications. p. 61.
Walther, S. Polster, S. Jank, M.P.M. Thiem, H. Ryssel, H. and Frey, L. 2011. Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment. Advanced Powder Technology, Vol. 22, Issue. 2, p. 253.
Honglertkongsakul, K. May, P.W. and Paosawatyanyong, B. 2011. Effect of temperature on sulfur-doped diamond-like carbon films deposited by pulsed laser ablation. Diamond and Related Materials, Vol. 20, Issue. 8, p. 1218.
Kumar, A. Pernot, J. Omnès, F. Muret, P. Traoré, A. Magaud, L. Deneuville, A. Habka, N. Barjon, J. Jomard, F. Pinault, M. A. Chevallier, J. Mer-Calfati, C. Arnault, J. C. and Bergonzo, P. 2011. Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification. Journal of Applied Physics, Vol. 110, Issue. 3, p. 033718.
Ellmer, Klaus 2012. Characterization of Materials.
Bierwagen, Oliver Nagata, Takahiro White, Mark E. Tsai, Min-Ying and Speck, James S. 2012. Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface. Journal of Materials Research, Vol. 27, Issue. 17, p. 2232.
Mbamara, U. S. Akinwumi, O.O. Obiajunwa, E.I. Ojo, I.A.O. and Ajayi, E.O.B. 2012. Deposition and Characterisation of Nitrogen-Doped Zinc Oxide Thin Films by MOCVD Using Zinc Acetate—Ammonium Acetate Precursor. Journal of Modern Physics, Vol. 03, Issue. 08, p. 652.
Lautenschlaeger, S. Eisermann, S. Haas, G. Zolnowski, E. A. Hofmann, M. N. Laufer, A. Pinnisch, M. Meyer, B. K. Wagner, M. R. Reparaz, J. S. Callsen, G. Hoffmann, A. Chernikov, A. Chatterjee, S. Bornwasser, V. and Koch, M. 2012. Optical signatures of nitrogen acceptors in ZnO. Physical Review B, Vol. 85, Issue. 23,
Dhara, Soumen and Giri, P.K. 2012. Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film. Thin Solid Films, Vol. 520, Issue. 15, p. 5000.
Mbamara, U. S. Alozie, G. A. Okeoma, K. B. and Iroegbu, C. 2013. Effect of Deposition Temperature on the FTIR Absorbance of Zinc Oxide Thin Films Produced by MOCVD. Journal of Modern Physics, Vol. 04, Issue. 03, p. 349.
Koon, Daniel W. Wang, Fei Hjorth Petersen, Dirch and Hansen, Ole 2013. Sensitivity of resistive and Hall measurements to local inhomogeneities. Journal of Applied Physics, Vol. 114, Issue. 16, p. 163710.
Szymański, Krzysztof Cieśliński, Jan L. and Łapiński, Kamil 2013. Van der Pauw method on a sample with an isolated hole. Physics Letters A, Vol. 377, Issue. 8, p. 651.
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We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n-type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n-type ZnO thin film and successfully reproduced a false positive Hall coefficient from n-type ZnO.
Hide All1Ohta, H., Kawamura, K., Orita, M., Hirano, M., Sarukura, H.Hosono, H.: Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO. Appl. Phys. Lett. 77, 475 20002Tsukazaki, A., Ohtomo, A., Onuma, T., Ohtani, M., Makino, T., Sumiya, M., Ohtani, K., Chichibu, S.F., Fuke, S., Segawa, Y., Ohno, H., Koinuma, H.Kawasaki, M.: Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat. Mater. 4, 42 20053Bagnall, D.M., Chen, Y.F., Zhu, Z., Yao, T., Koyama, S., Shen, M.Y.Goto, T.: Optically pumped lasing of ZnO at room temperature. Appl. Phys. Lett. 70, 2230 19974Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gonçalves, A.M.F., Marques, A.J.S., Pereira, L.M.N.Martins, R.F.P.: Fully transparent ZnO thin-film transistor produced at room temperature. Adv. Mater. 17, 590 20055Minegishi, K., Koiwai, Y., Kikuchi, Y., Yano, K., Kasuga, M.Shimizu, A.: Growth of p-type zinc oxide films by chemical vapor deposition. Jpn. J. Appl. Phys. 36, L1453 19976Joseph, M., Tabata, H.Kawai, T.: p-type electrical conduction in ZnO thin films by Ga and N codoping. Jpn. J. Appl. Phys. 38, L1205 19997Kim, K.K., Kim, H.S., Hwang, D.K., Lim, J.H.Park, S.J.: Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant. Appl. Phys. Lett. 83, 63 20038Ryu, Y.R., Zhu, S., Look, D.C., Wrobel, J.M., Jeong, H.M.White, H.W.: Synthesis of p-type ZnO films. J. Cryst. Growth 216, 330 20009Van der Pauw, L.J.: A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. 13, 1 195810Ohgaki, T., Sugimura, S., Ohashi, N., Sakaguchi, I., Sekiguchi, T.Haneda, H.: Structure and properties of GaN films grown on single crystalline ZnO substrates by molecular beam epitaxy. J. Cryst. Growth 275, e1143 200511Ohashi, N., Ohgaki, T., Sugimura, S., Maeda, K., Sakaguchi, I., Ryoken, H., Niikura, I., Sato, M.Haneda, H.: Characterization of zinc oxide single crystals for epitaxial wafer applications in Progress in Compound Semiconductor Materials III–Electronic and Optoelectronic Applications, edited by D.J. Friedman, O. Manasreh, I.A. Buyanova, A. Munkholm, and F.D. Auret Mater. Res. Soc. Symp. Proc. 799, 2004 Z5.40, p. 25512Ryoken, H., Sakaguchi, I., Ohashi, N., Sekiguchi, T., Hishita, S.Haneda, H.: Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method. J. Mater. Res. 20, 2866 200513Wang, Y-G., Ohashi, N., Ryoken, H.Haneda, H.: Virtual structure in luminescence profile of zinc oxide films causing discrepancy in peak identification. J. Appl. Phys. 100, 114917 2006
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- ISSN: 0884-2914
- EISSN: 2044-5326
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