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Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films

  • Spyros Gallis (a1), Harry Efstathiadis (a1), Mengbing Huang (a1), Ei Ei Nyein (a2), Uwe Hommerich (a2) and Alain E. Kaloyeros (a1)...


Room-temperature photoluminescence (PL) was observed at 1540 nm in erbium-implanted amorphous silicon carbide (a-SiC:Er) films grown by thermal chemical vapor deposition at 800 °C. The PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence, with the PL intensity at 1540 nm dropping only by a factor of 3.6 as the sample temperature was increased from 14 K to room temperature. Time-resolved PL measurements showed that the Er3+ luminescence lifetime of approximately 0.6 ms was nearly independent of sample temperature. In addition, luminescence quenching was observed as implanted Er dose exceeded 7 × 1015 ions/cm2. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively quench defect-produced luminescence and lead to a significant improvement in PL performance. These properties indicate that stoichiometric a-SiC is potentially a viable candidate for optoelectronic devices operating in the 1540 nm region.


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1.Polman, A.: J. Appl. Phys. 82, 1 (1997).
2.Coffa, S., Franzò, G. and Priolo, F.: MRS Bull. 23, 25 (1998).
3.Favennec, P.N., L’Haridon, H., Salvi, M., Moutonnet, D. and Guillon, Y. Le: Electron. Lett. 25, 718 (1989).
4.Rare Earth Doped Semiconductors II, edited by Coffa, S., Polman, A., and Schwartz, R.N. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, PA, 1996).
5.Zanatta, A.R.: Appl. Phys. Lett. 82, 1395 (2003).
6.Ivanov, I.G., Egilsson, T., Henry, A., Monemar, B. and Janzén, E.: Phys. Rev. B 64, 085203 (2001).
7.Ma, T., Xu, J., Du, J., Li, W., Huang, X. and Chen, K.: J. Appl. Phys. 88, 6408 (2000).
8.Terukov, E.I., Kudoyarova, V. Kh., Kuznetsov, A.N., Fuhs, W., Weiser, G. and Küehne, H.: J. Non-Cryst. Solids 227, 488 (1998).
9.Küehne, H., Weiser, G., Terukov, E.I., Kuznetsov, A.N., and Kudoyarova, V. Kh.. J. Appl. Phys. 86, 896 (1999).
10.Biersack, J.P. and Haggmark, L.G.: Nucl. Instrum. Methods 174, 257 (1980).
11.Awahara, K., Uekusa, S., Goto, T., Kobayashi, T. and Kumagai, M.: Nucl. Instrum. Methods Phys. Res., Sect. B 148, 507 (1999).
12.Przybylinska, H., Jantsch, W., Suprun-Belevitch, Y., Stepikhova, M., Palmetshofer, L., Hendorfer, G., Kozanecki, A., Wilson, R.J. and Sealy, B.J.: Phys. Rev. B 54, 2532 (1996).
13.Foti, G.: Appl. Surf. Sci. 184, 20 (2001).
14.Huang, M.B. and Ren, X.T.: Phys. Rev. B 68, 33203 (2003).
15.Choyke, W.J., Devaty, R.P., Clemen, L.L., Yoganathan, M., Pensl, G. and Hässler, Ch.: Phys. Lett. 65, 1668 (1994).
16.Lu, F., Carius, R., Alam, A., Heuken, M., Rizzi, A. and Buchal, Ch.: Thin Solid Films 425, 171 (2003).
17.Kozanecki, A., Jantsch, W., Lanzerstorfer, S., Sealy, B.J. and Jackson, S.: Mater. Sci. Forum 258, 1545 (1997).
18.Pellé, F., Auzel, F., Zavada, J.M., Lee, D.S. and Steckl, A.J.: Mater. Sci. Eng. B 105, 126 (2003).



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