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Photo-assisted crystallization of zirconia thin films prepared using chelate compounds

Published online by Cambridge University Press:  31 January 2011

Kaori Nishizawa*
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Takeshi Miki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Kazuyuki Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Kazumi Kato
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
*
a)Address all correspondence to this author. e-mail: k-nishizawa@aist.go.jp
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Abstract

A highly crystallized and smooth-surfaced zirconia (ZrO2) thin film was prepared using a precursor solution with 2,4-pentanedione addition (molar ratio of 1:1 for zirconium alkoxide); the film was irradiated with ultraviolet (UV) light using an ultrahigh-pressure mercury lamp. This thin film was compared with another thin film, which prepared using a precursor solution without additives and UV irradiation. The crystallinity of ZrO2 thin films improved with increasing 2,4-pentanedione addition and UV irradiation time and changed according to the type of organic additives. These results occurred presumably because the orientation of polymerization in zirconium alkoxide units and stability of chelate compounds for UV irradiation were controlled under these conditions. In addition, the method was effective for lower-temperature crystallization of highly crystallized, smooth-surfaced thin films.

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Articles
Copyright
Copyright © Materials Research Society 2007

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References

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