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A phenomenological model of ion-induced crystallization and amorphization

Published online by Cambridge University Press:  31 January 2011

G. Carter  and
M.J. Nobes
G. Carter
Affiliation:
Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, England
M.J. Nobes
Affiliation:
Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, England
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Abstract

A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 10 , October 1991 , pp. 2103 - 2108
Copyright
Copyright © Materials Research Society 1991

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