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Phase transformation in self-assembled Gd silicide nanostructures on Si(001)

  • Gangfeng Ye (a1), Martin A. Crimp (a1) and Jun Nogami (a2)

Abstract

Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure morphology, either nanowires or islands, and the silicide crystal structure. Scanning tunneling microscopy shows a phase transformation from nanowires to islands that nucleate at nanowire intersections. A specific mechanism for this transformation is proposed that explains nanowire growth behavior previously observed on vicinal Si surfaces.

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b)Address all correspondence to this author. e-mail: jun.nogami@utoronto.ca

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a)

Present address: Nanolab Technologies, San Jose, California 95134

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References

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Keywords

Phase transformation in self-assembled Gd silicide nanostructures on Si(001)

  • Gangfeng Ye (a1), Martin A. Crimp (a1) and Jun Nogami (a2)

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