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Phase partitioning and epitaxy of Zr(Al)O2 thin films on cubic zirconia substrates

Published online by Cambridge University Press:  03 March 2011

P.K. Narwankar ,
J.S. Speck  and
F.F. Lange
P.K. Narwankar
Affiliation:
Materials Deparment, College of Engineering. University of California, Santa Barbara, Santa Barbara, California 93106
J.S. Speck
Affiliation:
Materials Deparment, College of Engineering. University of California, Santa Barbara, Santa Barbara, California 93106
F.F. Lange
Affiliation:
Materials Deparment, College of Engineering. University of California, Santa Barbara, Santa Barbara, California 93106
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Abstract

Thin films of ZrO2-Al2O3 were grown on cubic-Zr(Y)O2 substrates by a liquid precursor route. Phase formation and epitaxy of these films was studied as a function of heat-treatment temperature and time. The following sequence of phases was observed in these thin films: Precursor → t-(Zr,Al)O2 → t-(Zr,Al)O2 + γ-(Al,Zr)2O3 → m-ZrO2 + α-Al2O3 Observations strongly suggest that the epitaxial process initiated before the metastable, single phase t-(Zr, Al)O2 partitioned to t-(Zr, Al)O2 + γ-(Al, Zr)2O3. Observations at 1400 °C show that, after the γ to α transformation, α-Al2O3, grains develop an elongated, prismatic morphology and an epitaxial relation with the underlying and surrounding m-ZrO2. The phase that is chemically and structurally similar to the substrate, in this case t-(Zr,Al)O2, or m-ZrO2, forms an epitaxial layer between the substrate and isolated, prismatic grains of heteroepitaxial α-Al2O3.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995 , pp. 1756 - 1763
Copyright
Copyright © Materials Research Society 1995

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