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Phase formation and crystal growth of Sr–Bi–Ta–O thin films grown by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

H. Bachhofer
Affiliation:
Physics Department, University of Regensburg, 93040 Regensburg, Germany
H. von Philipsborn
Affiliation:
Physics Department, University of Regensburg, 93040 Regensburg, Germany
W. Hartner
Affiliation:
Infineon Technologies, Memory Products, 81730 Munich, Germany
C. Dehm
Affiliation:
Infineon Technologies, Memory Products, 81730 Munich, Germany
B. Jobst
Affiliation:
Siemens, Corporate Technology, 81730 Munich, Germany
A. Kiendl
Affiliation:
Siemens, Corporate Technology, 81730 Munich, Germany
H. Schroeder
Affiliation:
Institute of Solid State Research, FZJ Research Center Juelich, 52425 Juelich, Germany
R. Waser
Affiliation:
Institute of Solid State Research, FZJ Research Center Juelich, 52425 Juelich, Germany
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Abstract

The crystallization process of SrxBiyTa2O5+x+3y/2 thin films grown by metalorganic chemical vapor deposition was investigated. Phase formation and crystal growth is greatly affected by the film composition and crystallization temperature. Phase diagrams for varying Sr or Bi contents were determined as a function of the crystallization temperature. The higher the Sr or Bi content in the film, the lower the phase transition temperature from the amorphous to the fluorite-type phase and from the fluorite-type to the Bi-layered Aurivillius phase. Low Sr and Bi contents support pyrochlore-type phase formation as a second phase. During annealing, excess Bi is not lost due to evaporation, but due to migration to the bottom electrode. Contrary to the fluorite-type phase, the Aurivillius phase is not able to incorporate the excess of Bi atoms. Decreasing grain size and pyrochlore-type phase formation entail decreasing remanent polarization.

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Articles
Copyright
Copyright © Materials Research Society 2001

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