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Passivation of β–SiC surface with native and nonnative oxides

Published online by Cambridge University Press:  31 January 2011

M. Iqbal Chaudhry  and
W. B. Berry
M. Iqbal Chaudhry
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13676
W. B. Berry
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, Indiana 46556
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Abstract

The passivation characteristics of various insulators are evaluated for the β–SiC surface. It is found that wet thermal oxides yield minimum electrical defects at the oxide-SiC interface. Dry thermal oxide results in too much charge either at the oxide-SiC interface or in the bulk. It is also shown that anodic aluminum oxide seems to possess suitable electrical properties for the fabrication of MOS structures on SiC, whereas the CVD silicon nitride proved to be the worst.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 6 , December 1989 , pp. 1491 - 1494
Copyright
Copyright © Materials Research Society 1989

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References

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