Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-13T00:18:57.228Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation of Sn Thin Films to SnO2. Micro-Raman Mapping and X-ray Diffraction Studies

Published online by Cambridge University Press:  31 January 2011

Luigi Sangaletti ,
Laura E. Depero ,
Brigida Allieri ,
Francesca Pioselli ,
Elisabetta Comini ,
Giorgio Sberveglieri  and
Marcello Zocchi
Luigi Sangaletti
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Laura E. Depero
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Brigida Allieri
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Francesca Pioselli
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Elisabetta Comini
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Giorgio Sberveglieri
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Marcello Zocchi
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Get access

Abstract

The oxidation of tin layers deposited onto alumina substrates is investigated with the aim to identify the different steps of the process and obtain information on the sample homogeneity, phase segregation, and degree of oxidation. It is shown that at least three phases coexist at 450 °C, Sn, SnO, and SnO2, and remarkable inhomogeneities, already visible at an optical inspection, are found in the thin film. A micro-Raman mapping of the layer shows that these inhomogeneities are related to the presence of different Sn oxidation states, as evidenced by the inhomogeneous distribution of SnO and SnOx Raman bands. The thin film becomes homogeneous after annealing treatments above 550 °C, where only the SnO2 cassiterite phase is detected.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 9 , September 1998 , pp. 2457 - 2460
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Nakamura, Y., in Chemical Sensor Technology, edited by Seiyama, T. (Elsevier, Amsterdam, 1989), Vol. 2, pp. 71–82.CrossRefGoogle Scholar
2.Sberveglieri, G., Sensor and Actuators B 6, 239 (1992).CrossRefGoogle Scholar
3. Powder Diffraction File, Volume: PDF2 44 (1994), International Centre for Diffraction Data, 12 Campus Blvd., Newton Square, Pennsylvania 19073–3273.Google Scholar
4., Hurken and , Tromel, Z. Anorg. Allg. Chem. 397, 117 (1973).CrossRefGoogle Scholar
5.Geurts, J., Rau, S., Richter, W., and Schmitte, F. J., Thin Solid Films 121, 217 (1984).CrossRefGoogle Scholar
6.Dieguez, A., Romano-Rodriguez, A., Morante, J. R., Nelli, P., Depero, L. E., Sangaletti, L., and Sberveglieri, G., presented at the 10th International Conference on Microscopy of Semiconducting Materials.Google Scholar
7.Depero, L. E., Perego, C., Sangaletti, L., and Sberveglieri, G., in Polycrystalline Thin Films: Structure, Texture, Properties and Applications II, edited by Frost, H. J., Parker, M. A., Ross, C. A., and Holm, E. A. (Mater. Res. Soc. Symp. Proc. 403, Pittsburgh, PA, 1996), p. 577.Google Scholar
8.Alfonso, C., Charai, A., Armigliato, A., and Narducci, D., Appl. Phys. Lett. 68, 1207 (1996).Google Scholar