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Ordering in (La,Sr)(Al,Ta)O3 substrates

Published online by Cambridge University Press:  31 January 2011

H. Li ,
L. Salamanca-Riba ,
R. Ramesh  and
J. H. Scott
H. Li
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
R. Ramesh
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
J. H. Scott
Affiliation:
National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899
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Abstract

(La, Sr)(Al, Ta)O3 (LSAT) has recently received increased attention as a substrate for the deposition of various oxide films. LSAT is usually considered as having a perovskite structure. However, the exact atomic structure of LSAT is not yet well known and has received little attention up to now. In this paper, a series of studies using x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometry were conducted to determine the atomic structure of LSAT. It was found that LSAT consists of two types of domains: one with a simple cubic perovskite structure (disordered with a = 0.3868 nm) and the other with a face-centered-cubic structure (ordered with a = 0.773 nm). Computer image simulation of high-resolution lattice images suggests that the ordered structure is due to ordering of the Al and Ta ions.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 7 , July 2003 , pp. 1698 - 1704
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1.Mateika, D., Kohler, H., Laudan, H., and Volkel, E., J. Cryst. Growth. 109, 447 (1991).Google Scholar
2.Tidrow, S.C., Tauber, A., Wilber, W.D., Lareau, R.T., Brandle, C.D., Berkstresser, G.W., Graitis, A.J. Ven, Potrepka, D.M., Budnick, J.I., and Wu, J.Z., IEEE Trans. Appl. Supercond. 7, 1766 (1997).Google Scholar
3.Canedy, C.L., Aggarwal, S., Li, H., Venkatesan, T., Ramesh, R., Keuls, F.W. Van, Romanofsky, R.R., and Miranda, F.A., Appl. Phys. Lett. 77, 1523 (2000).Google Scholar
4.Chakoumakosa, B.C., Schlom, D.G., Urbanik, M., and Luine, J., J. Appl. Phys. 83, 1979 (1998).CrossRefGoogle Scholar
5.Gibbons, B.J. and Trolier-McKinstry, S., IEEE Trans. Appl. Supercond. 7, 2177 (1997).Google Scholar
6.Shimamura, K., Tabata, H., Takeda, H., Kochurikhin, V.V., and Fukuda, T., J. Cryst. Growth 194, 209 (1998).Google Scholar
7.Li, H. and Salamanca-Riba, L., Ultramicroscopy 88, 171 (2001).CrossRefGoogle Scholar