Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Kaminska, E.
Piotrowska, A.
Kossut, J.
Butkute, R.
Dobrowolski, W.
Golaszewska, K.
Barcz, A.
Jakiela, R.
Dynowska, E.
Przezdziecka, E.
and
Wawer, D.
2003.
p-type in ZnO:N by codoping with Cr.
MRS Proceedings,
Vol. 786,
Issue. ,
Look, D. C.
Claflin, B.
Alivov, Ya. I.
and
Park, S. J.
2004.
The future of ZnO light emitters.
physica status solidi (a),
Vol. 201,
Issue. 10,
p.
2203.
Barnes, T. M.
Leaf, J.
Hand, S.
Fry, C.
and
Wolden, C. A.
2004.
A comparison of plasma-activated N2∕O2 and N2O∕O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition.
Journal of Applied Physics,
Vol. 96,
Issue. 12,
p.
7036.
Look, D. C.
and
Claflin, B.
2004.
P‐type doping and devices based on ZnO.
physica status solidi (b),
Vol. 241,
Issue. 3,
p.
624.
Wang, D
Liu, Y C
Mu, R
Zhang, J Y
Lu, Y M
Shen, D Z
and
Fan, X W
2004.
The photoluminescence properties of ZnO:N films fabricated by thermally oxidizing Zn3N2films using plasma-assisted metal-organic chemical vapour deposition.
Journal of Physics: Condensed Matter,
Vol. 16,
Issue. 25,
p.
4635.
Look, D. C.
Renlund, G. M.
Burgener, R. H.
and
Sizelove, J. R.
2004.
As-doped p-type ZnO produced by an evaporation∕sputtering process.
Applied Physics Letters,
Vol. 85,
Issue. 22,
p.
5269.
Yang, Hyuck Soo
Li, Y.
Norton, D. P.
Ip, K.
Pearton, S. J.
Jang, Soohwan
and
Ren, F.
2005.
Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition.
Applied Physics Letters,
Vol. 86,
Issue. 19,
Li, Xiaonan
Keyes, Brian
Asher, Sally
Zhang, S. B.
Wei, Su-Huai
Coutts, Timothy J.
Limpijumnong, Sukit
and
Van de Walle, Chris G.
2005.
Hydrogen passivation effect in nitrogen-doped ZnO thin films.
Applied Physics Letters,
Vol. 86,
Issue. 12,
Kaminska, E.
Piotrowska, A.
Kossut, J.
Barcz, A.
Butkute, R.
Dobrowolski, W.
Dynowska, E.
Jakiela, R.
Przezdziecka, E.
Lukasiewicz, R.
Aleszkiewicz, M.
Wojnar, P.
and
Kowalczyk, E.
2005.
Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2.
Solid State Communications,
Vol. 135,
Issue. 1-2,
p.
11.
Look, David C
2005.
Electrical and optical properties of p-type ZnO.
Semiconductor Science and Technology,
Vol. 20,
Issue. 4,
p.
S55.
Maile, E.
and
Fischer, R. A.
2005.
MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors.
Chemical Vapor Deposition,
Vol. 11,
Issue. 10,
p.
409.
Xiao, Zhiyan
Liu, Yichun
Zhang, Jiying
Zhao, Dongxu
Lu, Youming
Shen, Dezhen
and
Fan, Xiwu
2005.
Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition.
Semiconductor Science and Technology,
Vol. 20,
Issue. 8,
p.
796.
Ip, Kelly
Li, Yuanjie
Norton, D. P.
Pearton, S. J.
and
Ren, F.
2005.
Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO.
Applied Physics Letters,
Vol. 87,
Issue. 7,
Coutts, Timothy J.
Li, Xiaonan
Barnes, Teresa M.
Keyes, Brian M.
Perkins, Craig L.
Asher, Sally E.
Zhang, S.B.
Wei, Su-Huai
and
Limpijumnong, Sukit
2006.
Zinc Oxide Bulk, Thin Films and Nanostructures.
p.
43.
Vaithianathan, Veeramuthu
Lee, Yong Hee
Lee, Byung-Teak
Hishita, Shunichi
and
Kim, Sang Sub
2006.
Doping of As, P and N in laser deposited ZnO films.
Journal of Crystal Growth,
Vol. 287,
Issue. 1,
p.
85.
Yao, B.
Shen, D. Z.
Zhang, Z. Z.
Wang, X. H.
Wei, Z. P.
Li, B. H.
Lv, Y. M.
Fan, X. W.
Guan, L. X.
Xing, G. Z.
Cong, C. X.
and
Xie, Y. P.
2006.
Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering.
Journal of Applied Physics,
Vol. 99,
Issue. 12,
Wang, Buguo
Callahan, M.J.
Bouthillette, L.O.
Xu, Chunchuan
and
Suscavage, M.J.
2006.
Hydrothermal growth and characterization of nitrogen-doped ZnO crystals.
Journal of Crystal Growth,
Vol. 287,
Issue. 2,
p.
381.
Neumark, Gertrude
Gong, Yinyan
and
Kuskovsky, Igor
2006.
Springer Handbook of Electronic and Photonic Materials.
p.
843.
Nakano, Yoshitaka
Morikawa, Takeshi
Ohwaki, Takeshi
and
Taga, Yasunori
2006.
Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films.
Applied Physics Letters,
Vol. 88,
Issue. 17,
Xiao, Z Y
Liu, Y C
Li, B H
Zhang, J Y
Zhao, D X
Lu, Y M
Shen, D Z
and
Fan, X W
2006.
Electrical transport properties in nitrogen-doped p-type ZnO thin film.
Semiconductor Science and Technology,
Vol. 21,
Issue. 12,
p.
1522.