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Morphology of heavily B-doped diamond films

Published online by Cambridge University Press:  03 March 2011

Koichi Miyata ,
Kazuo Kumagai ,
Kozo Nishimura  and
Koji Kobashi
Koichi Miyata
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651-22, Japan
Kazuo Kumagai
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651-22, Japan
Kozo Nishimura
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651-22, Japan
Koji Kobashi
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651-22, Japan
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Abstract

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 11 , November 1993 , pp. 2845 - 2857
Copyright
Copyright © Materials Research Society 1993

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