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Microstructures and electrical resistivities of the RuO2 electrode on SiO2/Si annealed in the oxygen ambient

Published online by Cambridge University Press:  31 January 2011

Jeong Soo Lee ,
Hyun Ja Kwon ,
Young Woo Jeong ,
Hyun Ha Kim  and
Cha Yeon Kim
Jeong Soo Lee
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Hyun Ja Kwon
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Young Woo Jeong
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Hyun Ha Kim
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Cha Yeon Kim
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
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Abstract

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 11 , November 1996 , pp. 2681 - 2684
Copyright
Copyright © Materials Research Society 1996

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