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Microstructure and dielectric properties of (Ba,Sr)TiO3 thin film produced by the polymeric precursor method

Published online by Cambridge University Press:  31 January 2011

F. M. Pontes
Affiliation:
Department of Chemistry, Federal University of São Carlos-UFSCar, 13560-905 São Carlos, SP, Brazil
E. B. Araujo
Affiliation:
Department of Physics, Federal University of São Carlos-UFSCar, 13560-905 São Carlos, SP, Brazil
E. R. Leite
Affiliation:
Department of Chemistry, Federal University of São Carlos-UFSCar, 13560-905 São Carlos, SP, Brazil
J. A. Eiras
Affiliation:
Department of Physics, Federal University of São Carlos-UFSCar, 13560-905 São Carlos, SP, Brazil
E. Longo
Affiliation:
Department of Chemistry, Federal University of São Carlos-UFSCar, 13560-905 São Carlos, SP, Brazil
J. A. Varela
Affiliation:
Institute of Chemistry, Paulista State University, 14801-970 Araraquara, SP, Brazil
M. A. Pereira-da-Silva
Affiliation:
São Carlos Institute of Physics, São Paulo State University, 13560-970 São Carlos, SP, Brazil
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Abstract

BaxSr1−xTiO3 (x 4 0.6) (BST) thin films were successfully prepared on a Pt(111)/TiO2/SiO2/Si(100) substrate by spin coating, using the polymeric precursor method. BST films with a perovskite single phase were obtained after heat treatment at 700 °C. The multilayer BST thin films had a granular structure with a grain size of approximately 60 nm. A 480-nm-thick film was obtained by carrying out five cycles of the spin-coating/heating process. Scanning electron microscopy and atomic force microscopy analyses showed that the thin films had a smooth, dense, crack-free surface with low surface roughness (3.6 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 748 and 0.042. The high dielectric constant value was due to the high microstructural quality and chemical homogeneity of the thin films obtained by the polymeric precursor method.

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Articles
Copyright
Copyright © Materials Research Society 2000

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