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Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties

Published online by Cambridge University Press:  18 July 2011

Chee-Sung Park ,
Jae-Wung Lee ,
Gun-Tae Park ,
Hyoun-Ee Kim  and
Jong-Jin Choi
Chee-Sung Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jae-Wung Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Gun-Tae Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Hyoun-Ee Kim*
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jong-Jin Choi
Affiliation:
Department of Future Technology, Korea Institute of Machinery and Materials, Chang-Won, Gyeong-Nam 641-831, Korea
*
a) Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
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Abstract

Highly dense and crack-free Pb(Zr,Ti)O3 (PZT) thick films with a controlled microstructure and orientation were deposited on a platinized silicon substrate by the radio frequency magnetron sputtering method using a single oxide target. The microstructure and orientation of the films were adjusted by applying a thin (100) PZT seed layer by the sol-gel method and subsequent repeated sputtering. When a thin layer was deposited on the seed layer, the film had small grains with a columnar structure. However, as the film became thicker, it developed a large and non-columnar grain structure. Therefore, reducing the thickness of the film per deposition allowed the columnar microstructure to be maintained. The (100) orientation of the film was able to be maintained by depositing it on a (100) oriented seed layer. PZT thick films with controlled orientations and microstructures were successfully deposited up to a thickness of about 5 μm, and their ferroelectric and piezoelectric properties were characterized.

Keywords

FilmMicrostructurePiezoelectric
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1373 - 1377
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Polla, D.L. and Francis, L.F.: Ferroelectric thin films in microelectromechanical systems applications. MRS Bull. 21(7), 59 (1996).Google Scholar
2Spearing, S.M.: Materials issues in microelectromechanical systems (MEMS). Acta Mater. 48, 179 (2000).Google Scholar
3Park, C-S., Lee, J-W., Park, G-T., Kim, H-E., and Choi, J-J.: Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by multi-sputtering: Part I. Microstructural evolution. J. Mater. Res. 22, 1367 (2007).Google Scholar
4Du, X., Belegundu, U., and Uchino, K.: Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: Theoretical expectation for thin films. Jpn. J. Appl. Phys. 36, 5580 (1997).Google Scholar
5Du, X., Zheng, J., Belegundu, U., and Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).Google Scholar
6Taylor, D.V. and Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and “random” crystallographic orientation. Appl. Phys. Lett. 76, 1615 (2000).Google Scholar
7Park, C-S., Kim, S-W., Park, G-T., Choi, J-J., and Kim, H-E.: Orientation control of lead zirconate titanate film by combination of sol-gel and sputtering deposition. J. Mater. Res. 20, 243 (2005).Google Scholar
8Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L., and Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).Google Scholar
9Kalpat, S., Du, X., Abothu, I.R., Akiba, A., Goto, H., and Uchino, K.: Effect of crystal orientation on dielectric properties of lead zirconium titanate thin films prepared by reactive rf-sputtering. Jpn. J. Appl. Phys. 40, 713 (2001).CrossRefGoogle Scholar
10Thompson, C.V. and Carel, R.: Stress and grain growth in thin film. J. Mech. Phys. Solids 44, 657 (1996).Google Scholar
11Thompson, C.V.: Structure evolution during processing of polycrystalline films. Annu. Rev. Mater. Sci. 30, 159 (2000).Google Scholar
12Chen, S-Y. and Chen, I-W.: Temperature-time texture transition of Pb(Zr1− xTix )O3 thin films: II. Heat treatment and compositional effects. J. Am. Ceram. Soc. 77, 2337 (1994).Google Scholar
13Park, G-T., Choi, J-J., Ryu, J., Fan, H., and Kim, H-E.: Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method. Appl. Phys. Lett. 80, 4606 (2002).Google Scholar
14Shepard, J.F. Jr., Chu, F., Kanno, I., and Trolier-McKinstry, S.: Characterization and aging response of the d 31 piezoelectric coefficient of lead zirconate titanate thin films. J. Appl. Phys. 85, 6711 (1999).Google Scholar