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Microstructural development in the near-surface region during thermal annealing of Al2O3 implanted with cationic impurities

Published online by Cambridge University Press:  31 January 2011

G. C. Farlow ,
P. S. Sklad ,
C. W. White  and
C. J. McHargue
G. C. Farlow
Affiliation:
Wright State University, Dayton, Ohio 45435
P. S. Sklad
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
C. J. McHargue
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

Single-crystal Al2O3 was implanted with cationic impurities in the dose range 1–4 ⊠ 1016/cm2 and subsequently annealed in either an oxidizing or reducing environment. Following annealing at 1200°C or higher, crystalline precipitates or solid solutions are observed, which are consistent with what is expected from the equilibrium phase diagram.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1502 - 1519
Copyright
Copyright © Materials Research Society 1990

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