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Microstructural development in the near-surface region during thermal annealing of Al2O3 implanted with cationic impurities

  • G. C. Farlow (a1), P. S. Sklad (a2), C. W. White (a3) and C. J. McHargue (a2)

Abstract

Single-crystal Al2O3 was implanted with cationic impurities in the dose range 1–4 ⊠ 1016/cm2 and subsequently annealed in either an oxidizing or reducing environment. Following annealing at 1200°C or higher, crystalline precipitates or solid solutions are observed, which are consistent with what is expected from the equilibrium phase diagram.

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Microstructural development in the near-surface region during thermal annealing of Al2O3 implanted with cationic impurities

  • G. C. Farlow (a1), P. S. Sklad (a2), C. W. White (a3) and C. J. McHargue (a2)

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