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Microstructural characterization of Al98.5wt. %Si1.0wt. %Cu0.5wt. % on chemical-vapor-deposited W

  • Carey A. Pico (a1) and Tom D. Bonifield (a1)

Abstract

The microstructural and morphological properties of thin (6000 Å) Al98.5wt. %Si1.0wt. %Cu0.5wt. % films on chemical-vapor-deposited tungsten-coated substrates have been characterized as functions of substrate temperature during deposition and a postdeposition sinter. Scanning electron and transmission electron microscopic investigations show these properties can be categorized with respect to the substrate temperature during deposition. The Al98.5wt. %Si1.0wt. %Cu0.5wt. % films deposited on substrates heated at temperatures ≤200 °C are rough and are comprised of rounded grains. For deposition on substrates heated at ≤300 °C, the films are smooth. Large voids and small precipitates (presumably Al2Cu) are present in the films deposited at 400 °C. The films retain their as-deposited texture during a 450 °C sinter. Precipitates and evidence of W interactions occur in the sintered films deposited on the lower temperature substrates. In addition, the shapes of thermal hillocks and mesa-like protrusions that form during the sintering process are influenced by the films' as-deposited morphologies.

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1Ames, I.d'Heurle, F., and Horstmann, R.IBM J. Res. Dev. 14, 461 (1970).
2Attardo, M.J. and Rosenberg, R.J. Appl. Phys. 41, 2381 (1970).
3Scoggan, G. A.Agarwala, B. N.Peressini, P. P. and Brouillard, A.13th Ann. Proc. Rel. Phys. 151 (1975).
4Vaiday, S.Fraser, D.B. and Sinha, A.K.18th Int. Rel. Phys. Symp. 165 (1980).
5Vaiday, S.Fraser, D.B. and Sinha, A.K.Thin Solid Films 75, 253 (1980).
6Merchant, P. and Cass, T.22nd Int. Rel. Phys. Symp. 259 (1984).
7Denison, D. R. and Hartsough, L. D.J. Vac. Sci. Technol. 17, 1326 (1980).
8Burkstrand, J. M. and Hovland, C. T.J. Vac. Sci. Technol. A1, 449 (1983).
9Thomas, M.E.Keyser, T.K. and Goo, E.K.W.J. Appl. Phys. 59, 3768 (1986).
10Ahn, K.Y.Lin, T. and Madakson, P.B.Thin Solid Films 153, 409 (1987).
11Lin, T.Ahn, K.Y. J.M.Harper, E.Madakson, P.B. and Fryer, P.M., Thin Solid Films 154, 81 (1987).
12Griffin, A.J.Brontzen, F.R. and Dunn, C.F.Thin Solid Films 150, 237 (1987).
13Herman, D.S.Schuster, M.A. and Gerber, R.M.J. Vac. Sci. Technol. 9, 515 (1972).
14Faith, T.J.J. Appl. Phys. 52, 4630 (1981).
15Chang, C.Y. and Vook, R.W.J. Mater. Res. 4, 1172 (1989).
16Thomas, S. and Berg, H.M.IEEE Trans. CHMT-10, 252 (1987).
17Weston, D.Wilson, S.R. and Kottke, M.J. Vac. Sci. Technol. A8, 2025 (1990).
18Lawrence, J. D.McPherson, J. W. and Cordasco, V. T.J. Elec-trochem. Soc. 137, 3879 (1990).
19Broadbent, E.K.J. Vac. Sci. Technol. B5, 1661 (1987).
20Brown, D. M.Gorowitz, B.Piacente, P.Saia, R.Wilson, R. and Woodruff, D.IEEE Elect. Dev. Lett. 8, 55 (1987).
21Bradbury, D.R. and Kamins, T.I.J. Electrochem. Soc. 133, 1215 (1984).
22Pico, C. A. and Blumenthal, R. presented at the spring meeting of the Mater. Res. Soc San Francisco, 1990 (unpublished).
23Hieber, H. and Simon, T.IEEE 24th Int. Rel. Phys. Symp. 253 (1986).
24Pico, C.A. and Bonifield, T.D.J. Mater. Res. 6, 1817 (1991).
25Pico, C.A. and Bonifield, T.D.J. Mater. Res. 8, 1010 (1993).
26Smith, J.F.Zold, F.T. and Class, W.Thin Solid Films 96, 291 (1982).
27Sinha, A.K. and Sheng, T.T.Thin Solid Films 48, 117 (1978).
28Roberts, S. and Dobson, P. J.Thin Solid Films 135, 137 (1986).
29d'Heurle, F. M., Metall. Trans. 1, 725 (1970).
30Liu, H. Y.Chang, P. H.Bohlman, J. and Tsai, H. L. in Adhesion in Solids, edited by Mattox, D. M.Baglin, J. E. E.Gottschall, R. J. and Batich, C. D. (Mater. Res. Soc. Symp. Proc. 119, Pittsburgh, PA, 1988), p. 153.
31Lin, T.Ahn, K.Y. J.Harper, M.E. and Chaloux, P.N.Proc. 5th Int. VLSI Multilevel Interconnect Conf. 76 (1988).
32Hummel, R. E.Goho, S. Matts, and DeHoff, R. T.22nd Int. Rel. Phys. Symp. 259 (1984).
33Chaudhari, P.J. Appl. Phys. 45, 4339 (1974).
34Pennebaker, W.B.J. Appl. Phys. 40, 394 (1969).
35Sharma, S. K. and Spitz, J.Thin Solid Films 65, 339 (1980).
36Presland, A.E.B.Price, G.L. and Trimm, D.L.Surf. Sci. 29, 424 (1972).
37Gardner, D. S. and Flinn, P. A.IEEE Trans. Electron Devices 35, 2160 (1988).

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Microstructural characterization of Al98.5wt. %Si1.0wt. %Cu0.5wt. % on chemical-vapor-deposited W

  • Carey A. Pico (a1) and Tom D. Bonifield (a1)

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