Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-08T08:38:53.565Z Has data issue: false hasContentIssue false
  • English
  • Français

Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers

Published online by Cambridge University Press:  31 January 2011

Long-Qing Chen ,
Xin Zhang ,
Tong-Yi Zhang ,
H. Y. Lin  and
Sanboh Lee
Long-Qing Chen
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
H. Y. Lin
Affiliation:
Department of Materials Science, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Sanboh Lee
Affiliation:
Department of Materials Science, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

In the present work we studied the depth of damage layer in machined silicon wafers that was incorporated with chemical etching using micro-Raman spectroscopy. Subsurface damage causes changes in the shape and intensity for the shoulder (450–570 cm−1) of the most intense band (519 cm−1) and the second band (300 cm−1) regions of the Raman spectrum. Etching reduces the thickness of the damage layer and, hence, the intensities at the shoulder and the second band. The intensities at the shoulder and the second band become stable when the damage layer is completely etched out. The shoulder consists of two Gaussian profiles: the major and the minor. The band for the major profile is independent of etching depth, but the band for the minor profile shifts toward the longer wave numbers with increasing etching period until the damage layer is completely etched out. The depth of the damage layer is determined by the profiles of the shoulder and the second band and confirmed by the band shift of the minor profile. Transmission electron microscopy (TEM) further verified the results with respect to the depth of the damage layer. TEM observation showed that dislocations and stacking faults are responsible for the subsurface damage.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 7 , July 2000 , pp. 1441 - 1444
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Scott, J.F. and Pouligny, B., J. Appl. Phys. 64, 1547 (1988).CrossRefGoogle Scholar
2.Dearaujo, C.A.P, McMillan, L.D., Melnik, B.M., Cuchiaro, J.D., and Scott, J.F., Ferroelectrics 104, 241 (1990).Google Scholar
3.McKeown, P.A., Ann. CIRP 36, 495 (1987).CrossRefGoogle Scholar
4.Taniguchi, N., Ann. CIRP 32, 573 (1983).CrossRefGoogle Scholar
5.Bismayer, U., Brinksmerier, E., Güttler, B., Seibt, H., and Menz, C., Precis. Eng. 16, 139 (1994).CrossRefGoogle Scholar
6.Hashimoto, H., Itoh, H., Eda, H., and Kishi, K., Proc. Int. Conf. Prod. Eng. 5, 603 (1984).Google Scholar
7.Cardona, M., Proc. SPIE 822, 2 (1987).CrossRefGoogle Scholar
8.Sparks, R.G. and Paesler, M.A., J. Appl. Phys. 71, 891 (1992).CrossRefGoogle Scholar
9.Verhey, J., Bismayer, U., Güttler, B., and Lundt, H., Semicond. Sci. Technol. 9, 404 (1994).CrossRefGoogle Scholar
10.Brinksmeier, E., Precis. Eng. 11, 211 (1989).CrossRefGoogle Scholar
11.Johansson, S. and Schweitz, J.A., J. Am. Ceram. Soc. 71, 617 (1988).CrossRefGoogle Scholar
12.Sparks, R.G. and Paesler, M.A., Precis. Eng. 10, 191 (1988).CrossRefGoogle Scholar
13.Tonshoff, H.K., Schmieden, W.V., Inasaki, I., Konig, W., and Spur, G., Ann. CIRP 39, 621 (1990).CrossRefGoogle Scholar
14.Nemanich, R.J., in Materials Characterization, edited by Cheung, N.W. and Nicolet, M-A. (Mater. Res. Soc. Symp. Proc. 69, Pittsburgh, PA, 1986), p. 23.Google Scholar
15.Contreras, G., Sood, A.K., Cardona, M., and Campaan, A., Solid State Commun. 49, 303 (1984).CrossRefGoogle Scholar
16.Fauchet, P.M. and Campbell, I.H., CRC Crit. Rev. Solid State Mater. Sci. 14, S79 (1988).CrossRefGoogle Scholar
17.Anastrassakis, E., Pinezuk, A., Burstein, E., Pollak, F.H., and Cardona, M., Solid State Commun. 8, 133 (1970).CrossRefGoogle Scholar
18.Cerdeira, F., Buchenauer, C., Pollak, F., and Cardona, M., Phys. Rev. B 5, 580 (1972)CrossRefGoogle Scholar