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Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

  • Chun-Wei Chang (a1), Min-Hao Hong (a1), Wei-Fan Lee (a1), Kuan-Ching Lee (a1), Li-De Tseng (a1), Yi-Hann Chen (a1), Yen Chuang (a1), Yu-Ta Fan (a1), Takeshi Ueda (a2), Toshikazu Ishigaki (a2), Kitaek Kang (a2) and Woo Sik Yoo (a2)...

Abstract

Boron-doped, single (∼54 nm) or double (∼21 + 54 nm) Si1−xGex layers were epitaxially grown on 300-mm-diameter p-Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si1−xGex/Si wafers were annealed in the temperature range of 950–1050 °C for 60 s to investigate the effect of annealing on possible changes of Ge content and Si stress near the Si1−xGex/Si interface. High spectral resolution, micro-Raman spectroscopy was used as a nondestructive characterization technique with five excitation wavelengths of 363.8, 441.6, 457.9, 488.0, and 514.5 nm. Ge diffusion and generation of compressive stress at the Si1−xGex/Si interface were measured on all annealed wafers. Ge diffusion and the accumulation of compressive Si stress after annealing showed significantly different behaviors between single- and double-layer Si1−xGex/Si wafers. Raman characterization results were compared with secondary ion mass spectroscopy and high-resolution x-ray diffraction results.

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a)Address all correspondence to this author. e-mail: woosik.yoo@wafermasters.com

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Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

  • Chun-Wei Chang (a1), Min-Hao Hong (a1), Wei-Fan Lee (a1), Kuan-Ching Lee (a1), Li-De Tseng (a1), Yi-Hann Chen (a1), Yen Chuang (a1), Yu-Ta Fan (a1), Takeshi Ueda (a2), Toshikazu Ishigaki (a2), Kitaek Kang (a2) and Woo Sik Yoo (a2)...

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