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Materials in nanopipes of undoped GaN

Published online by Cambridge University Press:  26 July 2012

Junyong Kang
Affiliation:
Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China and Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
Tomoya Ogawa
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
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Extract

The nanopipes in undoped GaN epilayers grown on sapphire substrates were investigated by field emission high-resolution electron microscopy (HREM) and energy-dispersive x-ray spectrometry (EDS). In the HREM images, the cores of the nanopipes appeared disordered in the thin regions and more ordered in the thicker regions, indicating the amorphous layer on the surface has a significant influence on the visible image of the nanopipe in the thin regions. The EDS spectra showed that composition of the materials in nanopipes was mainly oxygen, carbon, and gallium elements. The results suggest that the nanopipes are related to impurities.

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Articles
Copyright
Copyright © Materials Research Society 1999

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