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Low-load indentation behavior of HfN thin films deposited by reactive rf sputtering

Published online by Cambridge University Press:  31 January 2011

R. Nowak ,
C. L. Li  and
S. Maruno
R. Nowak
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
C. L. Li
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
S. Maruno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Deformation of HfN thin films deposited by the reactive sputtering method on silicon and alumina substrates has been investigated using depth-sensing indentation. The experiments performed in a low load range (2−50 mN) revealed that even extremely shallow indentations were affected by the elastic/plastic response of the substrate. The analysis of the shape of the indentation load-depth hysteresis loops and of conventional hardness data was supplemented by considerations based on the recently proposed energy principle of indentation.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 1 , January 1997 , pp. 64 - 69
Copyright
Copyright © Materials Research Society 1997

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