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Low temperature phase separation in CeSi1.86

Published online by Cambridge University Press:  31 January 2011

R. Madar
Affiliation:
INPG, ENSPG, URA 1109 CNRS, BP 46, 38402 St. Martin d'Hères, France
E. Houssay
Affiliation:
INPG, ENSPG, URA 1109 CNRS, BP 46, 38402 St. Martin d'Hères, France
A. Rouault
Affiliation:
INPG, ENSPG, URA 1109 CNRS, BP 46, 38402 St. Martin d'Hères, France
J. P. Senateur
Affiliation:
INPG, ENSPG, URA 1109 CNRS, BP 46, 38402 St. Martin d'Hères, France
B. Lambert
Affiliation:
Laboratoire de Cristallographie, CNRS 166X, 38402 Grenoble, France
C. Meneau d'Anterroches
Affiliation:
CNET, CNS, BP 98, 38243 Meylan, France
J. Pierre
Affiliation:
Laboratoire Louis Néel, CNRS 166X, 38402 Grenoble, France
O. Laborde
Affiliation:
CRTBT, CNRS 166X, 38402 Grenoble, France
J. L. Soubeyroux
Affiliation:
Institut Laue Langevin, 38402 Grenoble, France
J. Pelissier
Affiliation:
CENG, BP 85X, 38041 Grenoble, France
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Abstract

Samples of CeSi1.86 which exhibit Kondo behavior are shown by neutron powder diffraction and transmission electron microscopy to consist of two closely related tetragonal phases. The primary phase is of the ThSi2 structure type with some vacancies in the silicon sublattice. The second phase presents an ordering of these vacancies. These two phases coexist at low temperature, but the abundance of the second phase increases with decreasing temperature. Neutron diffraction measurements and TEM experiments show that the phase separation occurs reversibly around 260 K, in close relation with an anomaly in the transport properties. The presence of a hysteresis indicates that we are dealing with a first order transition.

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Articles
Copyright
Copyright © Materials Research Society 1990

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References

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