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Lossy AlN–SiC composites fabricated by spark plasma sintering

Published online by Cambridge University Press:  03 March 2011

Xiang-Yu Zhang ,
Shou-Hong Tan ,
Jing-Xian Zhang ,
Dong-Liang Jiang ,
Bo Hu  and
Chen Gao
Xiang-Yu Zhang*
Affiliation:
State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Shou-Hong Tan
Affiliation:
State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Jing-Xian Zhang
Affiliation:
State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Dong-Liang Jiang
Affiliation:
State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Bo Hu
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, People’s Republic of China
Chen Gao
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: x.y.zhang@263.net.cn
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Abstract

Dense lossy AlN–SiC composites doped with Y2O3 were fabricated by spark plasma sintering (SPS). Both the microstructure and the dielectric properties are different from those of hot-pressed samples. Microstructure analysis reveals little solid solution (AlN)x(SiC)1-x is formed. Scanning evanescent microwave microscopy images show that the materials by SPS exhibit large contrast in dielectric permittivity, whereas the hot-pressed materials show very mild fluctuation in dielectric permittivity over the samples. The results indicate that AlN–SiC composites fabricated by SPS can be treated approximately as a mechanical mixture of AlN and SiC when estimating complex permittivity of the composite in the microwave range. The complex permittivity of the composites with different SiC contents can be phenomenologically predicted by effective medium approximation.

Keywords

Rapic solidificationScanning probe microscopy (SPM)Dielectric properties
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 9 , September 2004 , pp. 2759 - 2764
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1.Brosseau, C. andBeroual, A.: Computional electromagnetics and the rational design of new dielectric heterostructures. Prog. Inorg. Mater. 48, 373 (2003).CrossRefGoogle Scholar
2.Calame, J.P., Abe, D.K., Levush, B. andDanly, B.G.: Variable temperature measurements of the complex dielectric permittivity of lossy AlN–SiC composites from 26.5–40 GHz. J. Appl. Phys. 89, 5618 (2001).CrossRefGoogle Scholar
3.Bentsen, L.D., Hasselman, D.P.H. andRuh, R.: Effect of hot-pressing temperature on the thermal diffusivity/conductivity of SiC/AlN composites. J. Am. Ceram. Soc. 66 C (1983).CrossRefGoogle Scholar
4.Rafanieo, W., Cho, K. andVirkar, A.V.: Fabrication and characterization of SiC-AlN alloys. J. Mater. Sci. 16, 3479 (1981).CrossRefGoogle Scholar
5.Tokita, M.: Trends in advanced SPS spark plasma sintering system and technology. J. Soc. Powder Technol. Jpn. 30, 790 (1993).CrossRefGoogle Scholar
6.Shen, Z., Zhao, Z., Peng, H. andNygren, M.: Formation of tough interlocking microstructures in silicon nitride ceramics by dynamic ripening. Nature 417, 266 (2002).CrossRefGoogle ScholarPubMed
7.Groza, J.R., Risbud, S.H. andYamazaki, K.: Plasma activated sintering of additive-free AlN powders to near-theoretical density in 5 minutes. J. Mater. Res. 7, 2643 (1992).CrossRefGoogle Scholar
8.Groza, J.R. andZavaliangos, A.: Sintering activation by external electrical field. Mater. Sci. Eng. A 287, 171 (2000).CrossRefGoogle Scholar
9.Omori, M.: Sintering, consolidation, reaction and crystal growth by the spark plasma system (SPS). Mater. Sci. Eng. A 287, 183 (2000).CrossRefGoogle Scholar
10.Groza, J.R., Garcia, M. andSchneider, J.A.: Surface effects in field-assisted sintering. J. Mater. Res. 16, 286 (2001).CrossRefGoogle Scholar
11.Risbud, S.H., Groza, J.R. andKim, M.J.: Clean grain boundaries in AlN ceramics densified without addittives by a plasma-activated sintering process. Philos. Mag. B 69, 525 (1994).CrossRefGoogle Scholar
12.Khor, K.A., Cheng, K.H., Yu, L.G. andBoey, F.M.: Thermal conductivity and dielectric constant of spark plasma sintered aluminum nitride. Mater. Sci. Eng. A 347, 300 (2003).CrossRefGoogle Scholar
13.Zhou, Y., Hirao, K., Toriyama, M. andTanaka, H.: Silicon carbide ceramics prepared by pulse electric current sintering of β-SiC and α-SiC powders with oxide and nonoxide additives. J. Mater. Res. 14, 3363 (1999).CrossRefGoogle Scholar
14.Gao, C., Wei, T., Duewer, F., Lu, Y. andXiang, X-D.: High spatial resolution quantitative microwave impedance microscopy by a scanning tip microwave near-field microscope. Appl. Phys. Lett. 71, 13 (1997).CrossRefGoogle Scholar
15.Gao, C. andXiang, X-D.: Quantitative microwave near-field microscopy of dielectric properties. Rev. Sci. Instrum. 69, 3846 (1998).CrossRefGoogle Scholar
16.Cheng, H.F., Chen, Y.C., Wang, G., Xiang, X-D., Chen, G.Y., Liu, K.S. andLin, I.N.: Study of second-phases in Ba(Mg1/3Ta2/3)O3 materials by microwave near-field microscopy. J. Eur. Ceram. Soc. 23, 2667 (2003).CrossRefGoogle Scholar
17.Chen, Y.C., Cheng, H.F., Wang, G., Xiang, X-D., Chiang, Y.C., Liu, K.S. andLin, I.N.: Microwave dielectric imaging of Ba2Ti9O20 materials with a scanning-tip microwave near-field microscope. J. Eur. Ceram. Soc 23, 2671 (2003).CrossRefGoogle Scholar
18.Xiang, X-D. andGao, C.: Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope. Mater. Characterization 48, 117 (2002).CrossRefGoogle Scholar
19.Lee, J.H., Hyun, S. andChar, K.: Quantitative analysis of scanning microwave microscopy on dielectric thin film by finite element calculation. Rev. Sci. Instrum. 72, 1425 (2001).CrossRefGoogle Scholar
20.Sihvola, A.H.: How strict are the theoretical bounds for dielectric properties of mixtures? IEEE Trans. Geosci. Remote Sensing 40, 880 (2002).CrossRefGoogle Scholar