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Kinetics of hydrogen in preparing amorphous B5C:H thin films

  • Ruqiang Bao (a1), Douglas B. Chrisey (a1) and Daniele J. Cherniak (a2)

Abstract

The kinetics of hydrogen in preparing amorphous boron carbide (a-B5C:H) thin films was studied. The hydrogen concentration of a-B5C:H thin films formed by plasma-enhanced chemical vapor deposition (PECVD) from a single-source precursor (o-B10C2H12) is ∼35–50 at.% as determined by nuclear reaction analysis. The hydrogen concentration of the a-B5C:H thin films is an exponential function of the precursor flux during the deposition. After annealing, the hydrogen concentration in the a-B5C:H thin films decreases with the increasing annealing temperature. The kinetics of hydrogen removal during annealing is controlled predominantly by its dissociation from PECVD radicals in the a-B5C:H thin films. The activation energy of about 0.14 eV is related to hydrogen dissociation from B–H bonds, but higher activation energy (∼0.44 eV) is required to strip the hydrogen atoms from C–H bonds in the thin films.

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Corresponding author

a)Address all correspondence to this author. e-mail: chrisd@rpi.edu

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1.Chen, M.W., McCauley, J.W., and Hemker, K.J.: Shock-induced localized amorphization in boron carbide. Science 299, 1563 (2003).
2.Wu, M.L., Kiely, J.D., Klemmer, T., Hsia, Y.T., and Howard, K.: Process-property relationship of boron carbide thin films by magnetron sputtering. Thin Solid Films 449, 120 (2004).
3.Golikova, O.A.: Boron and boron-based semiconductors. Phys. Status Solidi. A Appl. Res. 51, 11 (1979).
4.Schmechel, R. and Werheit, H.: Correlation between structural defects and electronic properties of icosahedral boron-rich solids. J. Phys. Condens. Matter 11, 6803 (1999).
5.Emin, D.: Unusual properties of icosahedral boron-rich solids. J. Solid State Chem. 179, 2791 (2006).
6.Carrard, M., Emin, D., and Zuppiroli, L.: Defect clustering and self-healing of electron-irradiated boron-rich solids. Phys. Rev. B 51, 11270 (1995).
7.Harken, A.D., Day, E.E., Robertson, B.W., and Adenwalla, S.: Boron-rich semiconducting boron carbide neutron detector. Jpn. J. Appl. Phys. 44, 444 (2005).
8.Billa, R.B., Caruso, A.N., and Brand, J.I.: A new class of solar cells: Isomeric boron carbide semiconductors with fourth quadrant conductivity, in Progress in Compound Semiconductor Materials III− Electronic and Optoelectronic Applications, edited by Friedman, D.J., Manasreh, O., Buyanova, I.A., Munkholm, A., and Auret, F.D.(Mater. Res. Soc. Symp. Proc. 799, Warrendale, PA, 2004), Z3.10 p. 173.
9.Caruso, A.N., Billa, R.B., Balaz, S., Brand, J.I., and Dowben, P.A.: The heteroisomeric diode. J. Phys. Condens. Matter 16, L139 (2004).
10.Lee, S., Mazurowski, J., Ramseyer, G., and Dowben, P.A.: Characterization of boron-carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes. J. Appl. Phys. 72, 4925 (1992).
11.Byun, D., Hwang, S.d., Dowben, P.A., Perkins, F.K., Filips, F., and Ianno, N.J.: Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation. Appl. Phys. Lett. 64, 1968 (1994).
12.Lee, S.W. and Dowben, P.A.: The properties of boron-carbide silicon heterojunction diodes fabricated by plasma-enhanced chemical-vapor-deposition. Appl. Phys. A Mater. Sci. Process 58, 223 (1994).
13.Hwang, S.D., Yang, K., Dowben, P.A., Ahmad, A.A., Ianno, N.J., Li, J.Z., Lin, J.Y., Jiang, H.X., and McIlroy, D.N.: Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes. Appl. Phys. Lett. 70, 1028 (1997).
14.Carlson, L., Lagraffe, D., Balaz, S., Ignatov, A., Losovyj, Y.B., Choi, J., Dowben, P.A., and Brand, J.I.: Doping of boron carbides with cobalt, using cobaltocene. Appl. Phys. A Mater. Sci. Process 89, 195 (2007).
15.Hwang, S.D., Byun, D., Ianno, N.J., Dowben, P.A., and Kim, H.R.: Fabrication of boron-carbide/boron heterojunction devices. Appl. Phys. Lett. 68, 1495 (1996).
16.Emin, D.: Icosahedral boron-rich solids. Phys. Today 40, 55 (1987).
17.Dowben, P.A., Kizilkaya, O., Liu, J., Montag, B., Nelson, K., Sabirianov, I., and Brand, J.I.: 3d transition metal doping of semiconducting boron carbides. Mater. Lett. 63, 72 (2009).
18.Mori, T. and Nishimura, T.: Thermoelectric properties of homologous p- and n-type boron-rich borides. J. Solid State Chem. 179, 2908 (2006).
19.Caruso, A.N., Lunca-Popa, P., Losovyj, Y.B., Gunn, A.S., and Brand, J.I.: The band offsets of isomeric boron carbide, in Materials for Photovoltaics, edited by Durstock, M., Friedman, D., Gaudiana, R., and Rockett, A. (Mater. Res. Soc. Symp. Proc. 836, Warrendale, PA, 2005), L5.40, p. 185.
20.Bao, R. and Chrisey, D.B.: Chemical states of carbon in amorphous boron carbide thin films deposited by radio frequency magnetron sputtering. Thin Solid Films 519, 164 (2010).
21.Rappaport, P.: The electron-voltaic effect in p-n junctions induced by beta-particle bombardment. Phys. Rev. 93, 246 (1954).
22.Sezer, A.O. and Brand, J.I.: Chemical vapor deposition of boron carbide. Mater. Sci. Eng. B 79, 191 (2001).
23.Poortmans, J. and Arkhipov, V.: Thin Film Solar Cells: Fabrication, Characterization and Applications(John Wiley & Sons, West Sussex, England, 2007), pp. 120.
24.Schropp, R.E.I. and Zeman, M.: Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology (Kluwer Academic Publisher, Norwell, MA, 1998), pp.11112.
25.McIlroy, D.N., Zhang, J.D., Dowben, P.A., and Heskett, D.: Band gaps of doped and undoped films of molecular icosahedra. Mater. Sci. Eng. 217, 64 (1996).
26.Caruso, A.N., Bernard, L., Xu, B., and Dowben, P.A.: Comparison of adsorbed orthocarborane and metacarborane on metal surfaces. J. Phys. Chem. B 107, 9620 (2003).
28.Bagley, B.G., Aspnes, D.E., Adams, A.C., and Benenson, R.E.: Optical properties of LPCVD aB(H). J. Non-Cryst. Solids 3536, 441 (1980).
29.Schulz, D.L., Lutfurakhmanov, A., Maya, B., Sandstrom, J., Bunzow, D., Qadri, S.B., Bao, R.Q., Chrisey, D.B., and Caruso, A.N.: Characterization of a-B5C: H prepared by PECVD of orthocarborane: Results of preliminary FTIR and nuclear-reaction analysis studies. J. Non-Cryst. Solids 354, 2369 (2008).
30.Sneddon, L.G.: Transition metal promoted reactions of polyhedral boranes and carboranes. Pure Appl. Chem. 59, 837 (1987).
31.Baughman, R.H.: NMR, calorimetric, and diffraction study of molecular motion in crystalline carboranes. J. Chem. Phys. 53, 3781 (1970).
32.Jacobsohn, L.G., Schulze, R.K., Maia da Costa, M.E.H., and Nastasi, M.: X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering. Surf. Sci. 572, 418 (2004).

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Kinetics of hydrogen in preparing amorphous B5C:H thin films

  • Ruqiang Bao (a1), Douglas B. Chrisey (a1) and Daniele J. Cherniak (a2)

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