Hostname: page-component-7bb8b95d7b-dtkg6 Total loading time: 0 Render date: 2024-09-22T02:33:25.427Z Has data issue: false hasContentIssue false

The kinetics of chemical vapor deposited diamond-oxygen reaction

Published online by Cambridge University Press:  03 March 2011

M. Alam
Affiliation:
Department of Materials Engineering, New Mexico Institute of Mining and Technology, Socorro, New Mexico 87801
Q. Sun
Affiliation:
Department of Materials Engineering, New Mexico Institute of Mining and Technology, Socorro, New Mexico 87801
Get access

Abstract

The kinetics of reaction between chemical vapor deposited diamond films (prepared by the hot filament method) and oxygen gas was studied by thermogravimetry. The reactions were carried out at atmospheric pressure in gas mixtures containing between 25 and 100 vol. % oxygen (balance argon), and in the temperature range of 973–1073 K. The apparent order of the reaction is close to 0.6, and the apparent activation energy is 232 kJ/mole. The kinetic data are explained by assuming no mass transfer limitations, direct reaction between CVD diamond and oxygen to form CO and CO2, and thermodynamic equilibrium between CVD diamond, CO, and CO2. The dominant chemical reaction involves the formation of CO, while the formation of CO2 is not significant. Three stage mechanistic schemes are developed involving adsorption of oxygen on CVD diamond surface, surface chemical reaction, and desorption of adsorbed species to CO or CO2. The experimental rate data conform to the reaction rate expressions developed for the mechanistic schemes leading to the formation of CO and CO2, assuming adsorption as the rate-controlling step. The adsorption rate constants for the formation of CO and CO2 are determined. The activation energy of the adsorption step leading to the formation of CO is 213 kJ/mole.

Type
Articles
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Piano, L. S., Proc. SDIO/IST–ONR Diamond Technology Initiative Symp., July 11–13, 1989, Crystal City, VA.Google Scholar
2Piano, L. S., Yokota, S., and Ravi, K. V., in Proc. 1st Int. Symp. on Diamond and Diamond-like Films, edited by Dismukes, J. P., Purdes, A. J., Spear, K. E., Meyerson, B. S., Ravi, K. V., Moustakas, T. D., and Yoder, M. (The Electrochemical Society, Pennington, NJ, 1989), p. 380.Google Scholar
3Johnson, C. E., Weimer, W. A., and Harris, D. C., Mater. Res. Bull. XXIV, 1127 (1989).CrossRefGoogle Scholar
4Tankala, K., DebRoy, T., and Alam, M., J. Mater. Res. 5, 2483 (1990).CrossRefGoogle Scholar
5Nimmagadda, R. R., Joshi, A., and Hsu, W. L., J. Mater. Res. 5, 2445 (1990).CrossRefGoogle Scholar
6Johnson, C. E., Hasting, M. A. S, and Weimer, W. A., J. Mater. Res. 5, 2320 (1990).CrossRefGoogle Scholar
7Joshi, A., Nimmagadda, R., and Herrington, J. J., J. Vac. Sci. Technol. A 8, 2137 (1990).CrossRefGoogle Scholar
8Zhu, W., Wang, X. H., Badzian, A. R., and Messier, R., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Symp. Int. Proc. NDST–2, Pittsburgh, PA, 1991), p. 821.Google Scholar
9Tankala, K. and DebRoy, T., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Symp. Int. Proc. NDST–2, Pittsburgh, PA, 1991), p. 827.Google Scholar
10Sun, Q. and Alam, M., in Proc. 2nd Int. Symp. on Diamond Materials, edited by Purdes, A. J., Meyerson, B. M., Angus, J. C., Spear, K. E., Davis, R. F., and Yoder, M. (The Electrochemical Society, Pennington, NJ, 1991), p. 463.Google Scholar
11Sun, Q. and Alam, M., J. Electrochem. Soc. 139, 933 (1992).CrossRefGoogle Scholar
12Sun, Q. and Alam, M., J. Mater. Sci. 27, 5857 (1992).CrossRefGoogle Scholar
13Wada, N. and Solin, S. A., Physica B 105, 353 (1981).CrossRefGoogle Scholar
14Pryor, R. W., Wei, L., Kuo, P. K., Thomas, R. L., Anthony, T. R., and Banholzer, W. F., in reference 8, p. 863.Google Scholar
15Massoud, H. Z., Technical Report No. G502-1, Stanford Electronic Labs, Stanford University (1983).Google Scholar
16Evans, T. and Phaal, C., Proc. 5th Conf. on Carbon, The Pennsylvania State University (1962), p. 147.Google Scholar
17Warker, P. L. Jr., Fusinko, F. Jr., and Austin, L. G., in Advances in Catalysis, edited by Eley, D. D., Selwood, P. W., and Weisz, P. B. (Academic Press, New York, 1959), Vol. 11, p. 133.Google Scholar
18Turkdogan, E. T., Physical Chemistry of High Temperature Technology (Academic Press, New York, 1980), p. 7.Google Scholar