Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-20T07:53:15.955Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-beam mixing and thermal annealing of Al–Nb and Al–Ta thin films

Published online by Cambridge University Press:  31 January 2011

A. K. Rai ,
R. S. Bhattacharya ,
M. G. Mendiratta ,
P. R. Subramanian  and
D. M. Dimiduk
A. K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton–Xenia Road, Dayton, Ohio 45432
R. S. Bhattacharya
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton–Xenia Road, Dayton, Ohio 45432
M. G. Mendiratta
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton–Xenia Road, Dayton, Ohio 45432
P. R. Subramanian
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton–Xenia Road, Dayton, Ohio 45432
D. M. Dimiduk
Affiliation:
AFWAL/MLLM, Wright Patterson Air Force Base, Ohio 45433-6533
Get access

Abstract

Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattcring. The individual layer thicknesses were adjusted to obtain the overall compositions as Al3Nb and Al3Ta. The films were ion mixed with 1 MeV Au+ ions at a dose of 1 × 1016 ions cm−2. Uniform mixing and amorphization were achieved for both Al−Nb and Al−Ta systems. Equilibrium crystalline A13Nb and Al13Ta phases were formed after annealing of ion mixed amorphous films at 400 °C for 1 h. Unmixed films, however, remained unreacted at 400 °C for 1 h. Partial reaction was observed in the unmixed film of Al–Nb at 400 °C for 6 h. After annealing at 500 °C for 1 h, a complete reaction and formation of Al3Nb and Al3Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1082 - 1088
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L. S., Nucl. Instrum. Methods 182/183, 1 (1981).CrossRefGoogle Scholar
2Tsaur, B. Y., Lau, S. S., Hung, L. S., and Mayer, J. W., Nucl. Instrum. Methods 182/183, 67 (1981).Google Scholar
3Liu, B. X., Johnson, W. L., Nicolet, M. A., and Lau, S. S., Nucl. Instrum. Methods 209/210, 229 (1983).Google Scholar
4Hung, L. S., Nastasi, M., Gyulai, J., and Mayer, J. W., Appl. Phys. Lett. 42, 672 (1983).Google Scholar
5Bhattacharya, R. S., Raffoul, C. N., and Rai, A. K., J. Electrochem. Soc. 134, 400 (1987).CrossRefGoogle Scholar
6Rai, A. K. and Bhattacharya, R. S., Mater. Sci. Eng. 85, 139 (1987); Mater. Res. Soc. Symp. Proc. 54, 231 (1986).Google Scholar
7Jorda, J. L., Flukiger, R., and Muller, J., J. Less-Common Metals 75, 227 (1980)Google Scholar
8Schuster, J. C., Z. Metallkd. 76 (11), 724 (1985).Google Scholar
9Miracle, D. B., Mazdiyasni, S., and Subramanian, P. R., J. Metals 39 (10), 5(A) (1987).Google Scholar
10Johnson, W. L., Cheng, Y. T., Rossum, M. Van, and Nicolet, M. A., Nucl. Instrum. Methods B 7/8, 657 (1985).Google Scholar
11Kaufman, L. and Nesor, H., Calphad 2(4), 325 (1978).Google Scholar
12Kaufman, L. and Bernstein, H., Computer Calculations of Phase Dia-grams (Academic, New York, 1970).Google Scholar