Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T21:15:25.465Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion beam processing of LiNbO3

Published online by Cambridge University Press:  03 March 2011

B. R. Appleton ,
G. M. Beardsley ,
G. C. Farlow ,
W. H. Christie  and
P. R. Ashley
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
G. M. Beardsley
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
G. C. Farlow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
W. H. Christie
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
P. R. Ashley
Affiliation:
U. S. Army Missile Laboratory, Redstone, Arsenal, Alabama 35898
Get access

Abstract

Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 1 , February 1986 , pp. 104 - 113
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Schmidt, R. V. and Kaminow, I. P., Appl. Phys. Lett. 25, 458 (1984).CrossRefGoogle Scholar
2Naitoh, H., Nunoshita, M., and Nakayama, T., Appl. Opt. 16, 2546 (1977).CrossRefGoogle Scholar
3Ranganath, T. R. and Wang, S., Appl. Phys. Lett. 30, 376 (1977).CrossRefGoogle Scholar
4Yi-Yan, A., Andonovic, I., Pun, E. Y. B., and Bjortorp, B., Appl. Phys. Lett. 43, 19 (1983).CrossRefGoogle Scholar
5Cross, P. S., Baumgartner, R. A., and Kolner, B. H., Appl. Phys. Lett. 44, 486(1984).CrossRefGoogle Scholar
6Yap, D., Johnson, L. M., and Pratt, G. W., Appl. Phys. Lett. 44, 583 (1984).CrossRefGoogle Scholar
7Canali, C., Camera, A., Celotti, G., Delia Mea, G., and Mozzolli, P., in Defect Properties and Processing of High-Technology Nonmetallic Materials, edited by Crawford, J. H. Jr., Chen, Y., and Sibley, W. A. (North-Holland, New York, 1984), Mat. Res. Soc. Symp. Proa, Vol. 24, p. 459.Google Scholar
8Kaminow, I. P. and Carruthers, J. R., Appl. Phys. Lett. 22, 326 (1973).CrossRefGoogle Scholar
9Wood, V. E., J. Appl. Phys. 52, 1118 (1981).CrossRefGoogle Scholar
10Nuda, J., Fukuma, M., and Ito, Y., J. Appl. Phys. 51, 1379 (1980).CrossRefGoogle Scholar
11Jackel, J. J., Rice, C. E., and Veselka, J. S., Appl. Phys. Lett. 41, 607 (1982).CrossRefGoogle Scholar
12Wong, K. K., DeLaRue, R. M., and Wright, S., Opt. Lett. 7, 546 (1983).CrossRefGoogle Scholar
13De Micheli, M., Botineau, J., Neven, S., Sibillot, P., Ostrowsky, D. B., and Papuichon, M., Opt. Lett. 9, 116 (1983).CrossRefGoogle Scholar
14Becker, R. A., Appl. Phys. Lett. 43, 131 (1983).CrossRefGoogle Scholar
15Wilson, R. G., Jamba, D. M., and Betts, D. A., in Ref. 7, p. 181.Google Scholar
16Karge, H., Gotz, G., Jahn, U., and Schmidt, S., Nucl. Instrum. Methods 182/183, 777 (1981).CrossRefGoogle Scholar
17Destefanis, G. L., Townsend, P. D., and Gailliard, J. P., Appl. Phys. Lett. 32, 293 (1983).CrossRefGoogle Scholar
18Destefanis, G. L., Gilliard, J. P., Ligeon, E. P., Valette, S., Farmery, B. W., Townsend, P. D., and Perez, A., J. Appl. Phys. 50, 7898 (1979).CrossRefGoogle Scholar
19Wei, D. T. Y., Lee, W. W., and Bloom, L. R., Appl. Phys. Lett. 25, 329 (1974).CrossRefGoogle Scholar
20Heibel, J. and Voges, E., IEEE J. Quant. Electron. QE–18, 820 (1982) (Topical meeting on Integrated and Guided-Wave Optics, Incline Village, NV, January 1980).CrossRefGoogle Scholar
21Wenzlik, K., Heibei, J., and Voges, E., Phys. Stat. Sol. 61, K207 (1980).CrossRefGoogle Scholar
22Larson, T. R., Wiesenberger, W. H., and Lucke, W. H., Appl. Phys. Lett. 22, 617 (1973).CrossRefGoogle Scholar
23Townsend, P. D., J. Phys. E 10, 197 (1977).CrossRefGoogle Scholar
24Hartemann, P., Rev. Phys. Appl. 12, 843 (1977).CrossRefGoogle Scholar
25Hartemann, P. and Morizot, M., in Ion Implantation in Semiconductors, edited by Chernow, F., Borders, J. A., and Brice, D. K. (Plenum, New York, 1977), p. 257.Google Scholar
26Gotz, G. and Karge, H., Nucl. Instrum. Methods 209/210, 1079 (1983).CrossRefGoogle Scholar
27Kawabe, M., Kubota, M., Masuda, K., and Namba, S., J. Vac. Sci. Technol. 15, 1096 (1978).CrossRefGoogle Scholar
28Hartemann, P., Appl. Phys. Lett. 27, 263 (1975).CrossRefGoogle Scholar
29Destefanis, G. L., Gailliard, J. P., and Townsend, P. D., Radiat. Effects 48, 63 (1980).CrossRefGoogle Scholar
30Faik, A., Dawber, P. G., O'Connor, D. J., and Townsend, P. D., Radiat. Effects 64, 235 (1982).Google Scholar
31Valatka, R., Ioneliunas, S., and Pranevicius, L., Akust. Zh. 26, 804 (1980).Google Scholar
32Kurmer, J. P. and Tang, C. L., Appl. Phys. Lett. 42, 146 (1983).CrossRefGoogle Scholar
33Qui, Y., Griffith, J. E., and Tombrello, T. A., Radiat. Effects 64, 111 (1982).Google Scholar
34Hartemann, P., Couvard, P., and Desbois, D., Appl. Phys. Lett. 32, 266 (1978).CrossRefGoogle Scholar
35Townsend, P. D. and Valette, S., in Treatise on Materials Science and Technology, edited by Hirvoven, J. K. (Academic, New York, 1980), Vol. 18, p. 446.Google Scholar
36Townsend, P. D., Nucl. Instrum. Methods 182/183, 727 (1981).CrossRefGoogle Scholar
37Primak, W., J. Appl. Phys. 43, 4927 (1972).CrossRefGoogle Scholar
38Jetschke, S., Karge, H., and Hehl, K., Phys. Stat. Sol. A 77, 207 (1983).CrossRefGoogle Scholar
39Jetschke, S. and Hehl, K., Phys. Stat. Sol. A 88, 193 (1985).CrossRefGoogle Scholar
40Jackel, J., Glass, A. M., Peterson, G. E., Rise, C. E., Olson, D. H., and Veselka, J. J., J. Appl. Phys. 55, 269 (1984).CrossRefGoogle Scholar
41Sweeney, K. L. and Halliburton, L. E., Appl. Phys. Lett. 43, 336 (1983).CrossRefGoogle Scholar
42Ohmachi, Y. and Noda, J., Appl. Phys. Lett. 27, 544 (1975).CrossRefGoogle Scholar
43Kaninow, I. P. and Carruthers, J. R., Appl. Phys. Lett. 22, 326 (1973).CrossRefGoogle Scholar
44Battaglin, G., Delia Mea, G., De Marchi, G., Mazzoldi, P., and Puglisis, O., Radiat. Effects 64, 99 (1982) and references therein.CrossRefGoogle Scholar
45Pareja, R., Gonzalez, R., and Chen, Y., J. Appl. Phys. 56, 660 (1984).CrossRefGoogle Scholar
46Jackel, J. L., Opt. Commun. 3, 82 (1982).Google Scholar
47Jackel, J. L., Ramaswamy, V., and Lyman, S. P., Appl. Phys. Lett. 38, 509 (1981).CrossRefGoogle Scholar
48Ohmachi, Y. and Noda, J., Appl. Phys. Lett. 27, 544 (1975).CrossRefGoogle Scholar