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Investigation of interfacial phenomena in Ag–Si multilayers during the annealing process

  • J. H. Zhao (a1), M. Zhang (a1), R. P. Liu (a1), X. Y. Zhang (a1), L. M. Cao (a1), D. Y. Dai (a1), H. Chen (a1), Y. F. Xu (a1) and W. K. Wang (a1)...

Abstract

Interfacial phenomena and microstructure in Ag–Si multilayers with a modulation period of 7.64 nm during annealing from 323 to 573 K were investigated by in situ x-ray diffraction and high-resolution transmission electron microscopy. Uphill and downhill diffusion were observed on annealing. The temperature dependence of the effective diffusion coefficient from 373 K (as to downhill diffusion regime) to 523 K was De = 2.02 × 10−20 exp(−0.24 eV/kBT) m2/s. Diffusion of silicon atoms along silver grain boundaries was proposed as the main diffusion mechanism. After annealing, continuous silver sublayers changed to nanometer-sized silver particles (about 4.5 nm) coated completely by amorphous silicon.

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a) Address all correspondence to this authors. e-mail: 503g@aphy.iphy.ac.cn

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Investigation of interfacial phenomena in Ag–Si multilayers during the annealing process

  • J. H. Zhao (a1), M. Zhang (a1), R. P. Liu (a1), X. Y. Zhang (a1), L. M. Cao (a1), D. Y. Dai (a1), H. Chen (a1), Y. F. Xu (a1) and W. K. Wang (a1)...

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