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Investigation of crystal growth on (111) InSb thin films to produce high performance Hall elements

Published online by Cambridge University Press:  26 July 2012

Toshiaki Fukunaka ,
Takek Matsui  and
Shin-ya Matsuno
Toshiaki Fukunaka
Affiliation:
Department of Research and Development, Asahi Kasei Electronics Co. Ltd., Miyazaki, Japan
Takek Matsui
Affiliation:
Department of Research and Development, Asahi Kasei Electronics Co. Ltd., Miyazaki, Japan
Shin-ya Matsuno
Affiliation:
Analytical and Computational Research Lab., Asahi Chemical Industry Co. Ltd., Shizuoka, Japan
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Extract

The crystal growth of InSb thin films on mica substrates was investigated by conventional three temperature vacuum evaporation with varied Sb/In flux ratios and temperature programming for the substrate. The Sb/In flux ratio was varied from higher than 1.0 (about 2.0 is optimum), to less than 1.0 (about 0.7 is optimum), to again much higher than 1.0 during the stages of evaporation. The electromagnetic characteristics were investigated and x-ray analysis of the films at various stages was undertaken. The films obtained contained no excess In and they were (111) highly oriented in x-ray analysis, showing high electron mobility. These films were used to prepare high performance Hall elements.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 1 , January 1999 , pp. 39 - 43
Copyright
Copyright © Materials Research Society 1999

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References

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