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Intrinsic microcrystalline silicon by postgrowth anneals

Published online by Cambridge University Press:  31 January 2011

Jong-Hwan Yoon
Jong-Hwan Yoon*
Affiliation:
Department of Physics, College of Natural Sciences, Kangwon National University, Chunchon, Kangwon-do 200-701, Korea
*
a)e-mial: jhyoon@kangwon.ac.kr
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Abstract

Hydrogenated microcrystalline silicon (μc-Si:H) grown by a conventional plasma-enhanced chemical vapor deposition from high hydrogen-diluted silane was annealed by increasing the temperature from 25 to 450 °C at a constant rate of 12 °C/min (one annealing cycle). Dark-conductivity activation energy gradually increases with increasing the number of annealing cycle to a saturation value of about 0.6 eV, observed in truly intrinsic μc-Si:H films. For the saturated state, the dark conductivity of the order of 10−8 S/cm was obtained. Little or no change in the oxygen content was observed after the annealing.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 6 , June 2001 , pp. 1531 - 1534
Copyright
Copyright © Materials Research Society 2001

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References

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