Skip to main content Accessibility help

Influence of top electrode on resistive switching effect of chitosan thin films

  • Kim My Tran (a1), Dinh Phuc Do (a1), Kieu Hanh Ta Thi (a1) and Ngoc Kim Pham (a1)


Chitosan has attracted significant attention in the past decade because of its potential applications in water engineering, the food and nutrition technology, the textile and paper industries, and drug delivery. Recently, a particularly interesting application of chitosan has been proposed in transparent flexible electronic devices, including memristors and transistors. In this work, the resistive switching (RS) effect of chitosan thin films in a capacitor-like structure with Ag and Al as alternative top electrodes was studied. Both the devices showed a bistable RS effect under an external electric field with a high endurance of 102. The electrical conduction and RS mechanisms of chitosan-based devices were investigated. The trap-controlled space charge–limited current was responsible for electrical transport at the low-resistance state of both devices, while direct tunneling and Schottky emission at the high-resistance state were related to Ag/chitosan/fluorine-doped tin oxide (FTO) and Al/chitosan/FTO, respectively. The RS mechanism of the Ag/chitosan/FTO device was attributed to the formation and dissociation of Ag filaments through the dielectric layer, whereas the change in the barrier height at the Al and chitosan interface under an external electric field could control the RS mechanism of the Al/chitosan/FTO device.


Corresponding author

a)Address all correspondence to this author. e-mail:


Hide All
1.Strukov, D.B. and Kohlstedt, H.: Resistive switching phenomena in thin films: Materials, devices, and applications. MRS Bull. 37, 108 (2012).
2.Qian, K., Nguyen, V.C., Chen, T., and Lee, P.S.: Novel concepts in functional resistive switching memories. J. Mater. Chem. C 4, 9637 (2016).
3.Chang, T.C., Chang, K.C., Tsai, T.M., Chu, T.J., and Sze, S.M.: Resistance random access memory. Mater. Today 19, 254 (2016).
4.Hosseini, N.R. and Lee, J.S.: Biocompatible and flexible chitosan-based resistive switching memory with magnesium electrodes. Adv. Funct. Mater. 25, 5586 (2015).
5.Lee, B.H., Bae, H., Seong, H., Il Lee, D., Park, H., Choi, Y.J., Im, S.G., Kim, S.O., and Choi, Y.K.: Direct observation of a carbon filament in water-resistant organic memory. ACS Nano 9, 7306 (2015).
6.Silva, S.M.L., Braga, C.R.C., Fook, M.V.L., Raposo, C.M.O., Carvalho, L.H., and Canedo, E.L.: Infrared Spectroscopy Materials Science, Engineering and Technology (IntechOpen, London, 2012); pp. 4362.
7.Raeis-Hosseini, N. and Lee, J-S.: Resistive switching memory using biomaterials. J. Electroceram. 39, 223 (2017).
8.Raeis-Hosseini, N. and Lee, J.S.: Controlling the resistive switching behavior in starch-based flexible biomemristors. ACS Appl. Mater. Interfaces 8, 7326 (2016).
9.Raeis Hosseini, N. and Lee, J-S.: Resistive switching memory based on bioinspired natural solid polymer electrolytes. ACS Nano 9, 419 (2015).
10.Zhu, L.Q., Chao, J.Y., Xiao, H., Liu, R., and Wan, Q.: Chitosan-based electrolyte gated low voltage oxide transistor with a coplanar modulatory terminal. IEEE Electron Device Lett. 38, 322 (2017).
11.Morgado, J., Pereira, A.T., Bragança, A.M., Ferreira, Q., and Fernandes, S.C.M.: Self-standing chitosan films as dielectrics in organic thin-film transistors. eXPRESS Polym. Lett. 7, 960 (2013).
12.Shao, F., Wan, X., Yang, Y., Du, P., and Feng, P.: Optimization of chitosan gated electric double layer transistors by combining nanoparticle incorporation and acid doping. RSC Adv. 6, 109803 (2016).
13.Farshi Azhar, F., Olad, A., and Salehi, R.: Fabrication and characterization of chitosan–gelatin/nanohydroxyapatite–polyaniline composite with potential application in tissue engineering scaffolds. Des. Monomers Polym. 17, 654 (2014).
14.Ray, M., Pal, K., Anis, A., and Banthia, A.K.: Development and characterization of chitosan-based polymeric hydrogel membranes. Des. Monomers Polym. 13, 193 (2010).
15.Kumirska, J., Czerwicka, M., Kaczyński, Z., Bychowska, A., Brzozowski, K., Thöming, J., and Stepnowski, P.: Application of spectroscopic methods for structural analysis of chitin and chitosan. Mar. Drugs 8, 1567 (2010).
16.Rumengan, I.F.M., Suryanto, E., Modaso, R., Wullur, S., Tallei, T.E., and Limbong, D.: Structural characteristics of chitin and chitosan isolated from the biomass of cultivated rotifer, Brachionus rotundiformis. Int. J. Fish. Aquat. Sci. 3, 12 (2014).
17.Dimzon, I.K.D. and Knepper, T.P.: Degree of deacetylation of chitosan by infrared spectroscopy and partial least squares. Int. J. Biol. Macromol. 72, 939 (2015).
18.Adlim, A. and Bakar, M.A.: Preparation of chitosan–gold nanoparticles: Part 2. The role of chitosan. Indones. J. Chem. 8, 320 (2008).
19.Lin, W.P., Liu, S.J., Gong, T., Zhao, Q., and Huang, W.: Polymer-based resistive memory materials and devices. Adv. Mater. 26, 570 (2014).
20.Chiu, F-C.: A review on conduction mechanisms in dielectric films. Adv. Mater. Sci. Eng. 2014, 1–18 (2014).
21.Lim, E.W. and Ismail, R.: Conduction mechanism of valence change resistive switching memory: A survey. Electron. 4, 586 (2015).
22.Zhou, G.D., Lu, Z.S., Yao, Y.Q., Wang, G., Yang, X.D., Zhou, A.K., Li, P., Ding, B.F., and Song, Q.L.: Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer. J. Appl. Phys. 121, 155302 (2017).
23.Lin, Q., Hao, S., Hu, W., Wang, M., Zang, Z., Zhu, L., Du, J., and Tang, X.: Human hair keratin for physically transient resistive switching memory devices. J. Mater. Chem. C 7, 3315 (2019).
24.Prakash, R., Sharma, S., Kumar, A., and Kaur, D.: Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode. Curr. Appl. Phys. 19, 260 (2019).
25.Han, J.S., Van Le, Q., Choi, J., Hong, K., Moon, C.W., Kim, T.L., Kim, H., Kim, S.Y., and Jang, H.W.: Air-stable cesium lead iodide perovskite for ultra-low operating voltage resistive switching. Adv. Funct. Mater. 28, 1705783 (2018).
26.Kumatani, A., Li, Y., Darmawan, P., Minari, T., and Tsukagoshi, K.: On practical charge injection at the metal/organic semiconductor interface. Sci. Rep. 3, 1026 (2013).
27.Hölzl, J. and Schulte, F.K.: Solid Surface Physics (Springer, Berlin, Heidelberg, 1979); pp. 1150.
28.Ray Chowdhuri, A., Tripathy, S., Haldar, C., Roy, S., and Sahu, S.K.: Single step synthesis of carbon dot embedded chitosan nanoparticles for cell imaging and hydrophobic drug delivery. J. Mater. Chem. B 3, 9122 (2015).
29.Scott, J.C.: Metal–organic interface and charge injection in organic electronic devices. J. Vac. Sci. Technol., A 21, 521 (2003).


Related content

Powered by UNSILO

Influence of top electrode on resistive switching effect of chitosan thin films

  • Kim My Tran (a1), Dinh Phuc Do (a1), Kieu Hanh Ta Thi (a1) and Ngoc Kim Pham (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.