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The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi2

Published online by Cambridge University Press:  31 January 2011

M.C. Ridgway ,
R.G. Elliman ,
M. Petravic ,
R.P. Thornton  and
J.S. Williams
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia
R.G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia, and Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
M. Petravic
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia
R.P. Thornton
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia, and Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
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Abstract

The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while ∼40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 5 , May 1991 , pp. 1035 - 1039
Copyright
Copyright © Materials Research Society 1991

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