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Identification of Cl and Na Impurities in Inclusions of a Vapor-grown CdTe Doped with Zn and Cl

Published online by Cambridge University Press:  31 January 2011

V. Corregidor ,
V. Babentsov ,
M. Fiederle ,
T. Feltgen ,
K. Benz  and
E. Dieguez
V. Corregidor
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
V. Babentsov
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
M. Fiederle
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
T. Feltgen
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
K. Benz
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
E. Dieguez*
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
*
a)Address all correspondence to this author. e-mail: ernesto.dieguez@uam.es
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Extract

Morphology and analysis of composition of inclusions were done by secondary electron microscopy and spatially resolved energy-dispersive analysis of x-ray on semiintrinsic CdTe:Cl and CdTe:Zn:Cl crystals grown from the vapor phase by the modified Markov technique and on undoped CdTe crystals grown from the melt by the Bridgman method. In CdTe:Cl and CdTe:Zn:Cl crystals nonstoichiometric inclusions of about 10–20 μm were found, which contain high concentrations of Cl and Na impurities. The Cl is concentrated in small precipitates of 1–2 μm inside these inclusions. After short-time low-temperature annealing (600 °C), the inclusions mostly disappeared.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 1069 - 1073
Copyright
Copyright © Materials Research Society 2002

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References

1.Eisen, Y. and Shor, A., J. Cryst. Growth 184/185, 1302 (1998).CrossRefGoogle Scholar
2.Mullin, J.B. and Stragham, B.W., Rev. Phys. Appl. 12, 267 (1988).Google Scholar
3.Brion, H.G., Mewes, C., Hahn, J., and Schaufele, U., J. Cryst. Growth 134, 281 (1993).CrossRefGoogle Scholar
4.Rudolph, P. and Mühlberg, M., Mater. Sci. Eng. B16, 8 (1993).CrossRefGoogle Scholar
5.Rudolph, P., Engel, A., Schentke, I., and Grochocki, J. Cryst. Growth 147, 297 (1995).CrossRefGoogle Scholar
6.Laasch, M., Kunz, T., Fiederle, M., Eiche, C., Joerger, W., Kloess, G., and Benz, K.W., J. Cryst. Growth 174, 696 (1997).CrossRefGoogle Scholar
7.Pautrat, L., Magnea, N., and Faurie, J.P., J. Appl. Phys. 53, 8668 (1982).CrossRefGoogle Scholar
8.Fiederle, M., Ebling, D., Eiche, C., Hofman, D.M., Salk, M., Stadler, W., Benz, K.W., and Meyer, B.K., J. Cryst. Growth 138, 529 (1994).CrossRefGoogle Scholar
9.Kunz, T., Laasch, M., Meinhaardt, J., and Benz, K.W., J. Cryst. Growth 184/185, 1005 (1998).Google Scholar
10.Joerger, W., Laasch, M., Kunz, T., Fiederle, M., Meinhardt, J., Benz, K.W., Benz, K.W., Scholz, K., and Miller-Vogt, G., Cryst. Res. Technol. 32, 1103 (1997).CrossRefGoogle Scholar
11.Saminadayar, K., Francou, J.M., and Pautrat, J.L., J. Cryst. Growth 72, 236 (1985).CrossRefGoogle Scholar
12.Meyer, B.K., Stadler, W., Hoffman, D.M., Omling, P., Sinerius, D., and Benz, K.W., J. Cryst. Growth 117, 656 (1992).CrossRefGoogle Scholar
13.Fiederle, M., Eiche, C., Salk, M., Schwarz, R., and Benz, K.W., J. Appl. Phys. 84, 6689 (1998).CrossRefGoogle Scholar
14.Magee, T.J., Peno, J., and Beans, J., Phys. Status Solidi A 27, 557 (1975).CrossRefGoogle Scholar
15.Sochinskii, N.V., Babentsov, V.N., and Diéguez, E., in Luminescence and Related Properties of II–VI Semiconductors, edited by Vij, D.R. and Pal, U. (Nova Science Publisher, Inc., Commack, NY, 1998), Chap. VI, p. 247.Google Scholar
16.Sochinskii, N.V., Serrano, M.D., Die´guez, E., Agullo´-Rueda, F., Pal, U., Piqueras, J., and Ferna´ndez, P., J. Appl. Phys. 77, 2806 (1995).CrossRefGoogle Scholar
17.Duta, P.S., Marin, C., Die´guez, E., and Bhat, H.L., J. Cryst. Growth 160, 207 (1996).CrossRefGoogle Scholar
18.Tanaka, A., Masa, Y., and Kawashima, M., J. Cryst. Growth 117, 271 (1992).Google Scholar
19.Sochinskii, N.V., Serrano, M.D., Babentsov, V.N., Tarbaev, N.I., Garrido, J., and Diéguez, E., Semicond. Sci. Technol. 9, 1713 (1994).CrossRefGoogle Scholar
20.Shaw, D. and Watson, E., J. Phys. C 17, 4945 (1984).CrossRefGoogle Scholar
21.Corregidor, V., Babentsov, V., Castaño, J.L., Fierdele, M., Feltgen, T., Benz, K., and Diéguez, E. (to be published).Google Scholar