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Hydrothermally grown BaZrO3 films on zirconium metal: Microstructure, x-ray photoelectron spectroscopy, and Auger electron spectroscopy depth profiling

Published online by Cambridge University Press:  03 March 2011

V.M. Fuenzalida  and
M.E. Pilleux
V.M. Fuenzalida
Affiliation:
Universidad de Chile FCFM, Departamento de Física, Casilla 487–3, Santiago, Chile
M.E. Pilleux*
Affiliation:
Universidad de Chile FCFM, Departamento de Física, Casilla 487–3, Santiago, Chile
*
a)Present address: Kenbourne Ingeniería Ambiental S.A., Barros Errazuriz 1960, Santiago, Chile.
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Abstract

BaZrO3 films were grown on zirconium metal substrates by immersing thin Zr foils in an alkaline solution under hydrothermal conditions. The films were produced at temperatures ranging from 200 °C to 270 °C in a 0.25 M barium hydroxide solution for 3 to 8 h. The resulting films did not have visible pores or defects, and displayed a grain structure which depended on the treatment conditions, especially temperature. X-ray photoelectron and Auger spectroscopies revealed that (a) after removing the surface layer, films were clean, not displaying OH groups nor carbon contamination; (b) the Ba concentration steadily decreased as the depth increased, and did not behave as in BaTiO3 or SrTiO3 films prepared under similar conditions; and (c) the BaZrO3/Zr interface was very broad. Grazing angle x-ray diffraction analysis showed BaZrO3 (cubic), ZrO2 (hexagonal), and Zr (hexagonal), suggesting a layered structure: BaZrO3/ZrO2/Zr. The relative dielectric constant was ≍70 and was independent of the frequency between 100 Hz and 1 MHz. The dielectric loss factor (tan δ) was between 0.01 and 0.02. Dielectric breakdown occurred between 25 and 40 MVm−1.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2749 - 2754
Copyright
Copyright © Materials Research Society 1995

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