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High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

  • Byung-Teak Lee (a1), Yang-Soo Shin (a1) and Jin Hyeok Kim (a1)

Abstract

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

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Corresponding author

a)Address all correspondence to this author. e-mail: jinhyeok@chonnam.ac.kr

References

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High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

  • Byung-Teak Lee (a1), Yang-Soo Shin (a1) and Jin Hyeok Kim (a1)

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