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High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Published online by Cambridge University Press:  03 March 2011

Isaho Kamata ,
Hidekazu Tsuchida ,
William M. Vetter  and
Michael Dudley
Isaho Kamata*
Affiliation:
CRIEPI (Central Research Institute of Electric Power Industry, Materials Science Research Laboratory, Yokosuka, Kanagawa 240-0196, Japan
Hidekazu Tsuchida
Affiliation:
CRIEPI (Central Research Institute of Electric Power Industry, Materials Science Research Laboratory, Yokosuka, Kanagawa 240-0196, Japan
William M. Vetter
Affiliation:
State University of New York, Department of Materials Science and Engineering, Stony Brook, New York 11794-2275
Michael Dudley
Affiliation:
State University of New York, Department of Materials Science and Engineering, Stony Brook, New York 11794-2275
*
a) Address all correspondence to this author. e-mail: kamata@criepi.denken.or.jp This paper was selected as the Outstanding Meeting Paper for the 2006 MRS Spring Meeting Symposium B Proceedings, Vol. 911.
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Abstract

Synchrotron x-ray topography with a high-resolution setup using 1128 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

Keywords

Dislocations
Type
Outstanding Meeting Papers:Review
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 845 - 849
Copyright
Copyright © Materials Research Society 2007

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References

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