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High-resolution x-ray diffraction study of In0.25Ga0.75Sb/InAs superlattice

Published online by Cambridge University Press:  31 January 2011

A. Vigliante ,
H. Homma ,
J. T. Zborowski ,
T. D. Golding  and
S. C. Moss
A. Vigliante
Affiliation:
Department of Physics, University of Houston, Houston, Texas 77204-5506
H. Homma
Affiliation:
Department of Physics, University of Houston, Houston, Texas 77204-5506
J. T. Zborowski
Affiliation:
Department of Physics, University of Houston, Houston, Texas 77204-5506
T. D. Golding
Affiliation:
Department of Physics, University of Houston, Houston, Texas 77204-5506
S. C. Moss
Affiliation:
Department of Physics, University of Houston, Houston, Texas 77204-5506
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Abstract

An In0.25Ga0.75Sb/InAs strained-layer superlattice, grown by molecular-beam epitaxy (MBE) on a GaSb[001] substrate, has been characterized by four-circle x-ray diffractometry. This system, proposed by Maliot and Smith for ir detection application, is challenging because of the two group V species and the likelihood of cross-incorporation of the different elements during growth, leading possibly to interdiffusion and thus, to a more diffuse interface. High-resolution x-ray diffraction (XRD) profiles were obtained about several reciprocal lattice points in order to extract a reliable set of structural parameters. The profiles were then successfully modeled by computer simulation. The presence of many sharp higher-order satellite reflections in the XRD profiles is a measure of the high quality of the superlattices. The normal and lateral structural coherence was also measured and will be discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1744 - 1751
Copyright
Copyright © Materials Research Society 1999

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