Highly textured diamond thin films with (111) orientation have been successfully grown on the single crystal silicon (100) substrates by the flame method using the premixed acctylene and oxygen gas. Scanning electron microscopy (SEM), x-ray diffraction, and Raman spectroscopy studies have shown the formation of uniform diamond films with the full coverage of the deposition area on the Si substrates. An approach which leads to growing diamond films with very low graphite and/or amorphous carbon contaminations is described.
Altmetric attention score
* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.
Usage data cannot currently be displayed.