Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T10:59:18.308Z Has data issue: false hasContentIssue false
  • English
  • Français

The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxy

Published online by Cambridge University Press:  31 January 2011

D.C. Paine ,
D.J. Howard ,
N.G. Stoffel  and
J.A. Horton
D.C. Paine
Affiliation:
Brown University, Division of Engineering, Providence, Rhode Island 02912
D.J. Howard
Affiliation:
Brown University, Division of Engineering, Providence, Rhode Island 02912
N.G. Stoffel
Affiliation:
Bellcore, Red Bank, New Jersey 07701
J.A. Horton
Affiliation:
Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, Tennessee 37830
Get access

Abstract

In this paper we report on the growth of pseudomorphically strained Si1−xGex alloys on 〈001〉 Si by solid phase epitaxy. One set of amorphous alloys was formed by high dose ion implantation 74Gc implanted at an energy of 200 kcV to a fluence of 9.6 ⊠ 1020/m2). Our TEM observations show that regrowth of these Si1−xGex(xmax = 0.14) films at ≍590°C results in a high density of planar defects and that these defects are associated with faceting of the amorphous/crystalline interface during annealing. These results were compared with the solid phase regrowth of MBE-grown Si0.7Ge0.3 amorphized with 170 keV 28Si ions which exhibited identical defects and faceting during regrowth. Attendant with this faceting was a decrease in the regrowth velocity, a result of a change from a planar {001} growth morphology to a multi-faceted growth surface containing many <50 nm deep pyramidal impressions. The regrowth rate was quantified, at a particular temperature, by the use of Si homoepitaxy for calibration of in situ TEM experiments. It was shown that the regrowth rate at 594°C in pure Si was 51 nm/min, whereas in the Si0.7Ge0.3 the regrowth rate decreased, as a result of {111} faceting, to 21 nm/min. RBS was used to characterize Ge concentrations and lattice resolution TEM was used to study the development of the faceted interface and associated planar defects during regrowth.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 1023 - 1031
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

lPatton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., and Stork, J.M.C., IEEE ED Lett. 9 (4), 165 (1988).CrossRefGoogle Scholar
2King, C. A., Hoyt, J. L., Gronet, C. M., Gibbons, J. F., Scott, M. P., and Turner, J., IEEE ED Lett. 10 (2), 52 (1989).CrossRefGoogle Scholar
3Temkin, H., Antreasyan, A., Olsson, N. A., Pearsall, T. P., and Bean, J. C., Appl. Phys. Lett.,49 (13), 809 (1986).CrossRefGoogle Scholar
4Chilton, B.T., Robinson, B. J., Thompson, D. A., Jackman, T. E., and Baribeau, J-M., Appl. Phys. Lett. 54 (1), 42 (1989).CrossRefGoogle Scholar
5Sinclair, R. and Parker, M. A., Nature 322, 531 (1986).CrossRefGoogle Scholar
6Parker, M. A., Ph.D. Thesis, Stanford University (1988).Google Scholar
7Csepregi, L., Kennedy, E. F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).CrossRefGoogle Scholar
8Lau, S. S. and Mayer, J.W., Treatise on Materials Science and Technology, edited by Tu, K. N. and Rosenberg, R. (Academic Press, New York, 1982), Vol. 24, pp. 67–111.Google Scholar
9Alexander, H., Dislocations in Solids, edited by Nabarro, F. R. N. (Elsevier Sci. Pub., 1986), Vol. 7, p. 135.Google Scholar
10Ernst, F. and Pirouz, P., J. Mater. Res. 4 (4), 834 (1989).CrossRefGoogle Scholar
11Matthews, J.W., Epitaxial Growth, edited by J.W. Matthews (Academic Press, 1974) p. 559.CrossRefGoogle Scholar
12Freund, L. B., J. Appl. Mech. 54, 553 (1987).CrossRefGoogle Scholar
13People, R. and Bean, J.C., Appl. Phys. Lett. 47 (3), 322 (1985); ibid., 49 (4), 229 (1986)CrossRefGoogle Scholar