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Growth of diamond films on copper

Published online by Cambridge University Press:  03 March 2011

M. L. Hartsell  and
L. S. Piano
M. L. Hartsell
Affiliation:
Kobe Steel USA inc., P.O. Box 13608, 79 T. W. Alexander Drive, Research Triangle Park, North Carolina 27709
L. S. Piano
Affiliation:
Kobe Steel USA inc., P.O. Box 13608, 79 T. W. Alexander Drive, Research Triangle Park, North Carolina 27709
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Extract

Copper and diamond both have cubic crystal structures and similar lattice constants, making Cu an excellent candidate substrate for the heteroepitaxial growth of electronic device quality diamond. In this study a Cu substrate preparation method was developed to obtain large-area, free-standing polycrystalline diamond films. Concurrently, a statistically designed experiment was used to maximize the diamond film quality and resulted in (111) and (100) faceted films of quality comparable to or better than those grown on Si. The diamond films were analyzed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 4 , April 1994 , pp. 921 - 926
Copyright
Copyright © Materials Research Society 1994

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