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Growth and thermal stability of (V,Al)2Cx thin films

  • Yan Jiang (a1), Riza Iskandar (a2), Moritz to Baben (a3), Tetsuya Takahashi (a3), Jie Zhang (a3), Jens Emmerlich (a3), Joachim Mayer (a4), Conrad Polzer (a5), Peter Polcik (a5) and Jochen M. Schneider (a6)...

Abstract

Vanadium (V)–aluminum (Al)–carbon (C) thin films were deposited on Al2O3 $(11\mathop 2\limits^ - 0)$ substrates at 500 °C by direct current magnetron sputtering using a powder metallurgical composite target with 2:1:1 MAX phase stoichiometry. Transmission electron microscopy (TEM) and x-ray diffraction results suggest that a hexagonal Al-containing vanadium carbide solid solution (V,Al)2Cx was formed. The films exhibited a strong basal plane texture. The lattice parameter of the hexagonal solid solution was dependent on the annealing temperature: the c lattice parameter decreased by 3.45% after annealing for 1 h at 750 °C compared to the as-deposited film. Based on the comparison between experimental and theoretical lattice parameter data, it is reasonable to assume that this annealing-induced change in lattice parameter is a consequence of atomic ordering. Meanwhile, the formation of V2AlC MAX phase was observed at 650 °C and phase-pure V2AlC was obtained at 850 °C. TEM images support the notion that V2AlC forms by nucleation and growth.

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a)Address all correspondence to this author. e-mail: yan.jiang@mch.rwth-aachen.de

References

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1.Barsoum, M.W.: The Mn+1AXn phases: A new class of solids. Prog. Solid State Chem. 28, 201281 (2000).
2.Hettinger, J.D., Lofland, S.E., Finkel, P., Meehan, T., Palma, J., Harrell, K., Gupta, S., Ganguly, A., Raghy, T.E., and Barsoum, M.W.: Electrical transport, thermal transport, and elastic properties of M2AlC (M = Ti, Cr, Nb, and V). Phys. Rev. B 72, 115120 (2005).
3.Lofland, S.E., Hettinger, J.D., Harrell, K., Finkel, P., Gupta, S., Barsoum, M.W., and Hug, G.: Elastic and electronic properties of select M2AX phase. Appl. Phys. Lett. 84, 508510 (2004).
4.Tian, W.B., Wang, P.L., Zhang, G.J., Kan, Y.M., Li, Y.X., and Yan, D.S.: Synthesis and thermal and electrical properties of bulk Cr2AlC. Scr. Mater. 54, 841846 (2006).
5.Hajas, D.E., Scholz, M., Ershov, S., Hallstedt, B., Palmquist, J.P., and Schneider, J.M.: Thermal and chemical stability of Cr2AlC in contact with α-Al2O3 and NiAl. Int. J. Mater. Res. 101(12), 15191523 (2010).
6.Sun, Z.M., Li, S., Ahuja, R., and Schneider, J.M.: Calculated elastic properties of M2AlC (M = Ti, V, Cr Nb and Ta). Solid State Commun. 129, 589592 (2004).
7.Bouhemadou, A.: Structure, electronic and elastic properties of MAX phases M2GaN (M = Ti, V and Cr). Solid State Sci. 11, 18751881 (2009).
8.Schneider, J.M., Sigumonrong, D.P., Music, D., Walter, C., Emmerlich, J., Iskandar, R., and Mayer, J.: Elastic properties of Cr2AlC thin films probed by nanoindentation and ab initio molecular dynamics. Scr. Mater. 57, 11371140 (2007).
9.Radovic, M., Barsoum, M.W., Ganguly, A., Zhen, T., Finkel, P., Kalidindi, S.R., and Curzio, E.L.: On the elastic properties and mechanical damping of Ti3SiC2, Ti3GeC2, Ti3Si0.5Al0.5C2 and Ti2AlC in the 300–1573 K temperature range. Acta Mater. 54, 27572767 (2006).
10.Lin, Z.J., Li, M.S., Wang, J.Y., and Zhou, Y.U.: High temperature oxidation and hot corrosion of Cr2AlC. Acta Mater. 55, 61826191 (2007).
11.Wang, Q.M., Renteria, A.F., Schroeter, O., Mykhaylonka, R., Leyens, C., Garkas, W., and to Baben, M.: Fabrication and oxidation behavior of Cr2AlC coating on Ti6242 alloy. Surf. Coat. Technol. 204(15), 23432352 (2010).
12.Lee, D.B. and Nguyen, T.D.: Cyclic oxidation of Cr2AlC between 1000 and 1300 °C in air. J. Alloys Compd. 464, 434439 (2008).
13.Lin, Z.J., Li, M.S., Wang, J.Y., and Zhou, Y.C.: Influence of water vapor on the oxidation behavior of Ti3AlC2 and Ti2AlC. Scr. Mater. 58, 2932 (2008).
14.Barsoum, M.W., Tzenov, N., Procopio, A., El-Raghy, T., and Ali, M.: Oxidation of Tin+1AlXn (n = 1–3 and X = C, N). J. Electrochem. Soc. 148(8), C551C562 (2001).
15.Hajas, D.E., To Baben, M., Hallstedt, B., Iskandar, R., Mayer, J., and Schneider, J.M.: Oxidation of Cr2AlC coatings in the temperature range from 1230 to 1410 °C. Surf. Coat. Technol. 206, 591598 (2011).
16.Song, G.M., Pei, Y.T., Sloof, W.G., Li, S.B., De Hosson, H.Th.M., and van der Zwaag, S.: Oxidation-induced crack healing in Ti3AlC2 ceramics. Scr. Mater. 58, 1316 (2008).
17.Sigumonrong, D.P., Zhang, J., Zhou, Y.C., Music, D., Emmerlich, J., Mayer, J., and Schneider, J.M.: Interfacial structure of V2AlC thin films deposited on (11–20) sapphire. Scr. Mater. 64, 347350 (2011).
18.Schneider, J.M., Mertens, R., and Music, D.: Structure of V2AlC studied by theory and experiment. J. Appl. Phys. 99, 013501 (2006).
19.Etzkorn, J., Ade, M., and Hillebrecht, H.: V2AlC, V4AlC3-x (x ≈ 0.31), and V12Al3C8: Synthesis, crystal growth, structure, and superstructure. Inorg. Chem. 46, 76467653 (2007).
20.Sigumonrong, D.P., Zhang, J., Zhou, Y., Music, D., and Schneider, J.M.: Synthesis and elastic properties of V2AlC thin films by magnetron sputtering from elemental targets. J. Phys. D: Appl. Phys. 42, 185408185411 (2009).
21.Gupta, S. and Barsoum, M.W.: Synthesis and oxidation of V2AlC and (Ti0.5, V0.5)2AlC in air. J. Electrochem. Soc. 151, D24D29 (2004).
22.Bowman, A.L., Wallace, T.C., Yarnell, J.L., Wenzel, R.G., and Storms, E.K.: The crystal structures of V2C and Ta2C. Acta Cryst. 19, 69 (1965).
23.Gebhardt, T., Hajas, D.E., Scholz, M., Hallstedt, B., Cappi, B., Song, J., Telle, R., and Schneider, J.M.: Strength degradation of NiAl-coated sapphire fiber with a V2AlC interlayer. Mater. Sci. Eng., A 525, 20206 (2009).-
24.Eklund, P., Beckers, M., Jansson, U., Högberg, H., and Hultman, L.: The Mn+1AXn phases: Materials science and thin-film processing. Thin Solid Films 518, 18511878 (2010).
25.Petrov, I., Barna, P.B., Hultman, L., and Greene, J.E.: Microstructural evolution during film growth. J. Vac. Sci. Technol., A 21(5), 117128 (2003).
26.Abdulkadhim, A., To Baben, M., Schnabel, V., Hans, M., Thieme, N., Polzer, C., Polcik, P., and Schneider, J.M.: Crystallization Kinetics of V2AlC. Thin Solid Films 520, 1930 (2012).
27.Schulz, L.G.: A direct method of determining preferred orientation of a flat reflection sample using a Geiger counter x-ray spectrometer. J. Appl. Phys. 20, 10301032 (1949).
28.Mitchell, D.R.G.: Difftools: Electron diffraction software tools for digital micrograph. Microsc. Res. Tech. 71, 588593 (2008).
29.Stadelmann, P.: Electron Microscopy Software Java Version, JEMS, ver 3.3425U2008, CIME-EPFL. Lausanne, Switzerland.
30.Kohn, W. and Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133A1138 (1965).
31.Kresse, G. and Joubert, D.: From ultrasoft pseudopotentials to the projector augmented wave method. Phys. Rev. B 59, 17581775 (1999).
32.Monkhorst, H.J. and Pack, J.D.: Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
33.Blöchl, P.E.: Projector augmented wave method. Phys. Rev. B 50, 17953 (1994).
34.Zunger, A.: Special quasirandom structures. Phys. Rev. Lett. 65, 353 (1990).
35.Cowley, J.M.: X-ray measurement of order in single crystal of Cu3Au. J. Appl. Phys. 21, 24 (1950).
36.Abrikosov, I.A., Niklasson, A.M.N., Simak, S.I., Johansson, B., Ruban, A.V., and Skriver, H.L.: Order-N Green’s function technique for local environment effects in alloys. Phys. Rev. Lett. 76, 4203 (1996).
37.Abrikosov, I.A., Simak, S.I., Johansson, B., Ruban, A.V., and Skriver, H.L.: Locally self-consistent Green’s function approach to the electronic structure problem. Phys. Rev. B 56, 9319 (1997).
38.Tang, L. and Laughlin, D.E.: Electron diffraction patterns of fibrous and lamellar textured polycrystalline thin films. I. Theory. J. Appl. Crystallogr. 29, 411418 (1996).
39.Ohring, M.: The Materials Science of Thin Films, 2nd ed. (Academic Press, London, UK, 2001).
40.Cottrell, A.H.: Carbides of group VA transition metals. Mater. Sci. Technol. 11, 100104 (1995).
41.Wilhelmsson, O., Eklund, P., Högberg, H., Hultman, L., and Jansson, U.: Structural, electrical and mechanical characterization of magnetron-sputtered V-Ge-C thin films. Acta Mater. 56, 25632569 (2008).
42.Wilhelmsson, O., Palmquist, J-P., Lewin, E., Emmerlich, J., Eklund, P., Persson, P.O.A., Högberg, H., Li, S., Ahuja, R., Eriksson, O., Hultman, L., and Jansson, U.: Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering. J. Cryst. Growth 291, 290300 (2006).
43.Schneider, J.M., Hjoervarsson, B., Wang, X., and Hultman, L.: On the effect of hydrogen incorporation in strontium titanate layers grown by high-vacuum magnetron sputtering. Appl. Phys. Lett. 75, 34763478 (1999).

Keywords

Growth and thermal stability of (V,Al)2Cx thin films

  • Yan Jiang (a1), Riza Iskandar (a2), Moritz to Baben (a3), Tetsuya Takahashi (a3), Jie Zhang (a3), Jens Emmerlich (a3), Joachim Mayer (a4), Conrad Polzer (a5), Peter Polcik (a5) and Jochen M. Schneider (a6)...

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