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Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma

Published online by Cambridge University Press:  31 January 2011

K. Volz ,
W. Ensinger ,
W. Reiber ,
B. Rauschenbach  and
B. Stritzker
K. Volz
Affiliation:
Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany
W. Ensinger
Affiliation:
Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany
W. Reiber
Affiliation:
Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany
B. Rauschenbach
Affiliation:
Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany
B. Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany
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Extract

Silicon was pulse biased to −45 kV in a methane plasma generated by microwave excitation in the electron cyclotron resonance (ECR) mode. Hydrocarbon ions were accelerated in the electrical field and implanted into the silicon. Rutherford backscattering (RBS) measurements showed that it is possible to incorporate a concentration of up to 95 at.% C into the Si. Cross-section transmission microscopy (XTEM) showed that the resulting surface layer was amorphous. Annealing at 1250 °C resulted in the formation of 10 to 60 nm thick, crystalline SiC layers.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1765 - 1768
Copyright
Copyright © Materials Research Society 1998

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